Preparation on the [(Pb,La) (Zr,Ti)O3] ferroelectric thin films by using the Sol-Gel processing
PeiYu Yan,Qijiang Cai,Longtu Li,Xiaowen Zhang
1995-01-01
Abstract:The decomposition and crystallization of [(Pb,La) (Zr,Ti)O3] gel and the microstructure of [(Pb,La)(Zr,Ti)O3] thin films were studied with the DTA TG, XRD and SEM method. It was found that (1) in order to obtain the dens and crack-free [(Pb,La) (Zr,Ti)O3] thin films, the precursor sol of appropriate viscosity should be used which is obtained by controlling the concentration and hydrolysis degree of the precursor; (2) to keep a slow heating-rate in the heat treatment process is quite vital for eliminating the cracking of thin films; (3) the PT transition layer promotes the crystallization of [(Pb,La) (Zr,Ti)O3] films on the platinized silicon; (4) the dielectric constants of Sol-Gel derived [(Pb,La) (Zr,Ti)O3]/PT composite thin films are of 500-600, and their dissipation factors are less than 0.1, besides, their remanent polarization and coercive field are of 9.3 ��C/cm2 and 50kV/cm respectively.