Abstract:Germanium mono-chalcogenides have received considerable attention for being a promising replacement for the relatively toxic and expensive chalcogenides in renewable and sustainable energy applications. In this paper, we explore the potential of the recently discovered novel cubic structured (π-phase) GeS and GeSe for thermoelectric applications in the framework of density functional theory coupled with Boltzmann transport theory. To examine the modifications in their physical properties, the across composition alloying of π-GeS and π-GeSe (such as π-GeS1-xSex for x =0, 0.25, 0.50, 0.75, and 1) has been performed that has shown important effects on the electronic band structures and effective masses of charge carriers. An increase in Se composition in π-GeS1-xSex has induced a downward shift in their conduction bands, resulting in the narrowing of their energy band gaps. The thermoelectric coefficients of π-GeS1-xSex have been accordingly influenced by the evolution of the electronic band structures and effective masses of charge carriers. π-GeS1-xSex features sufficiently larger values of Seebeck coefficients, power factors and figures of merit (ZTs), which experience further improvement with an increase in temperature, revealing their potential for high-temperature applications. The calculated results show that ZT values equivalent to unity can be achieved for π-GeS1-xSex at appropriate n-type doping levels. Our calculations for the formation enthalpies indicate that a π-GeS1-xSex alloying system is energetically stable and could be synthesized experimentally. These intriguing characteristics make π-GeS1-xSex a promising candidate for futuristic thermoelectric applications in energy harvesting devices.

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Low-Temperature Growth of Two-Dimensional Layered Chalcogenide Crystals on Liquid.

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Understanding the growth mechanisms of γ-GeSe for polymorph-selective large-area deposition

Sonication-assisted synthesis of semiconducting atomic crystals of germanium monoselenide: An isostructural and isoelectronic analog of black phosphorous

Single-Crystal Colloidal Nanosheets of GeS and GeSe

Controllable epitaxial growth of GeSe 2 nanostructures and nonlinear optical properties

Thickness-dependent ultrafast nonlinear optical response of germanium selenide nanosheets

One-step method to simultaneously synthesize separable Te and GeTe nanosheets

Chemically Engineered Substrates for Patternable Growth of Two-Dimensional Chalcogenide Crystals.

Germanium-Assisted Direct Growth of Graphene on Arbitrary Dielectric Substrates for Heating Devices.

Patterning two-dimensional chalcogenide crystals of Bi 2 Se 3 and In 2 Se 3 and efficient photodetectors

Patterning Two-Dimensional Chalcogenide Crystals of Bi2se3 and In2se3 and Efficient Photodetectors

Two-Dimensional Gese As an Isostructural and Isoelectronic Analogue of Phosphorene: Sonication-Assisted Synthesis, Chemical Stability, and Optical Properties

Engineering the electronic band structures of novel cubic structured germanium monochalcogenides for thermoelectric applications

Self‐Limiting Synthesis of Ultrathin Ge(110) Single Crystal via Liquid Metal

Heteroepitaxial Growth of Germanium-on-Silicon Using Ultrahigh-Vacuum Chemical Vapor Deposition with RF Plasma Enhancement

Two-dimensional Monoelemental Germanene Nanosheets: Facile Preparation and Optoelectronic Applications

Epitaxial Ge thin film Growth on Si Using a Cost-Effective Process in Simplified CVD Reactor

Chemical vapor deposition of high optical quality large area monolayer Janus transition metal dichalcogenides

High-performance Thermoelectric Monolayer γ-GeSe and its Group-IV Monochalcogenide Isostructural Family