Abstract:CVD growth is capable of producing multiple single crystal islands of atomically thin TMDs over large area substrates, with potential control of their morphology, lateral size, and epitaxial alignment to substrates with hexagonal symmetry. Subsequent merging of epitaxial domains can lead to single-crystal monolayer sheets - a step towards scalable production of high quality TMDs. For CVD growth to be effectively used for such production it is necessary to be able to rapidly assess the quality of material across entire large area substrates. To date characterisation has been limited to sub 0.1 mm2 areas, where the properties measured are not necessarily representative of an entire sample. Here, we apply photoluminescence (PL) imaging and computer vision techniques to create an automated analysis for large area samples of semiconducting TMDs, measuring the properties of island size, density of islands, relative PL intensity and homogeneity, and orientation of triangular domains. The analysis is applied to 20x magnification optical microscopy images that completely map samples of WSe2 on hBN, 5.0 mm x 5.0 mm in size, and MoSe2-WS2 on SiO2/Si, 11.2 mm x 5.8 mm in size. For the latter sample 100,245 objects were identified and their properties measured, with an orientation extracted from 27,779 objects that displayed a triangular morphology. In the substrates studied, two prevailing orientations of epitaxial growth were observed in WSe2 grown on hBN and four predominant orientations were observed in MoSe2, initially grown on c-plane sapphire. The proposed analysis will greatly reduce the time needed to study freshly synthesised material over large area substrates and provide feedback to optimise growth conditions, advancing techniques to produce high quality TMD monolayer sheets for commercial applications.

Chemical vapor deposition of high optical quality large area monolayer Janus transition metal dichalcogenides

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One-Step Synthesis of Metal/Semiconductor Heterostructure NbS2/MoS2

Growth of large-area 2D MoS₂(₁-x) Se₂x semiconductor alloys.

Chemical Vapor Deposition Of Large-Size Monolayer Mose2 Crystals On Molten Glass

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Vertical Heterostructures of Layered Metal Chalcogenides by Van Der Waals Epitaxy.

Large Area Automated Characterisation of Chemical Vapour Deposition Grown Monolayer Transition Metal Dichalcogenides Through Photoluminescence Imaging

Chemical vapour deposition of group-VIB metal dichalcogenide monolayers: engineered substrates from amorphous to single crystalline.

ChemInform Abstract: Chemical Vapor Deposition of Group‐VIB Metal Dichalcogenide Monolayers: Engineered Substrates from Amorphous to Single Crystalline

Controllable structure-engineered janus and alloy polymorphic monolayer transition metal dichalcogenides by plasma-assisted selenization process toward high-yield and wafer-scale production

Chemical Vapor Deposition Synthesized Atomically Thin Molybdenum Disulfide with Optoelectronic-Grade Crystalline Quality

Direct liquid injection pulsed-pressure CVD of large area MoS2 on Si/SiO2

Large Area Vapor Phase Growth and Characterization of MoS2 Atomic Layers on SiO2 Substrate

Tailored Growth of Transition Metal Dichalcogenides' Monolayers by Chemical Vapor Deposition

Single‐Crystal MoS 2 Monolayer Wafer Grown on Au (111) Film Substrates

Epitaxial Growth of Large‐area Monolayers and van der Waals Heterostructures of Transition‐metal Chalcogenides via Assisted Nucleation

Rapid Growth of Monolayer MoSe 2 Films for Large‐Area Electronics

Large Area Single Crystal (0001) Oriented MoS2 Thin Films

Halide Vapor Phase Epitaxy of Monolayer Molybdenum Diselenide Single Crystals