Abstract:Quasi‐1D BiSeI nanowires with high purity and high quality are synthesized via chemical vapor deposition on mica substrate. The high crystallinity and inherent structural anisotropy of BiSeI nanowire offer its detector board photoresponse with high responsivity, fast response rate, and prominent linear dichroism. This work opens new prospects for building novel multifunctional optoelectronic devices. Bismuth chalcohalides (BiSeI and BiSI), a class of superior light absorbers, have recently garnered great attention owing to their promise in constructing next‐generation optoelectronic devices. However, to date, the photodetection application of bismuth chalcohalides is still limited due to the challenge in controllable preparation. Herein, the synthesis of large‐scale quasi‐1D BiSeI nanowires via chemical vapor deposition growth is reported. By precisely tuning the growth temperature and the Se supply, it can effectively control the growth thermodynamics and kinetics of BiSeI crystal, and thus achieve high purity quasi‐1D BiSeI nanowires with high crystal quality, uniform diameter, and tunable domain length. Theory and optical characterizations of the quasi‐1D BiSeI nanowires reveal an indirect bandgap of 1.57 eV with prominent optical linear dichroism. As a result, the quasi‐1D BiSeI nanowire‐based photodetector demonstrates a broadband photoresponse (400–800 nm) with high responsivity of 5880 mA W−1, fast response speed of 0.11 ms and superior air stability. More importantly, the photodetector displays strong polarization sensitivity (anisotropic ratio = 1.77) under the 532 nm light irradiation. This work will provide important guides to the synthesis of other quais‐1D metal chalcohalides and shed light on their potential in constructing novel multifunctional optoelectronic devices.

Patterning Two-Dimensional Chalcogenide Crystals of Bi2se3 and In2se3 and Efficient Photodetectors

Patterning two-dimensional chalcogenide crystals of Bi 2 Se 3 and In 2 Se 3 and efficient photodetectors

Low-Temperature Growth of Two-Dimensional Layered Chalcogenide Crystals on Liquid.

Epitaxy and photoresponse of two-dimensional GaSe crystals on flexible transparent mica sheets.

Chemically Engineered Substrates for Patternable Growth of Two-Dimensional Chalcogenide Crystals.

Controlled Growth of Atomically Thin In2se3 Flakes by Van Der Waals Epitaxy

Chemical Patterning of High-Mobility Semiconducting 2D Bi2 O2 Se Crystals for Integrated Optoelectronic Devices

Fast Photoresponse from 1T Tin Diselenide Atomic Layers

Chemical Patterning of High-Mobility Semiconducting 2D Bi 2 O 2 Se Crystals for Integrated Optoelectronic Devices.

Controlled growth of vertically stacked In2Se3/WSe2 heterostructures for ultrahigh responsivity photodetector

High-Performance Waveguide-Integrated Bi2O2Se Photodetector for Si Photonic Integrated Circuits.

Wafer-Scale Patterning Synthesis of Two-Dimensional WSe 2 Layers by Direct Selenization for Highly Sensitive van der Waals Heterojunction Broadband Photodetectors

Universal Strategy Integrating Strain and Interface Engineering to Drive High‐Performance 2D Material Photodetectors

Robust Design of High-Performance Optoelectronic Chalcogenide Crystals from High-Throughput Computation

Progress in the preparation and physical properties of two-dimensional Cr-based chalcogenide materials and heterojunctions

Polarization‐Sensitive Photodetector Based on High Crystallinity Quasi‐1D BiSeI Nanowires Synthesized via Chemical Vapor Deposition

2D Perovskite Single Crystals for Photodetectors: From Macro‐ to Microscale

Growth of wafer-scale chromium sulphide and selenide semiconductor films

Wafer-Scale Patterning Integration of Chiral 3D Perovskite Single Crystals toward High-Performance Full-Stokes Polarimeter

Research progress on two-dimensional indium selenide crystals and optoelectronic devices

Guided Formation of Large Crystals of Organic and Perovskite Semiconductors by an Ultrasonicated Dispenser and Their Application As the Active Matrix of Photodetectors.