Phase Diagram of growth modes in Graphene Growth on Cooper by Vapor Deposition

Tongtong Wang,Jian Zheng,Xin Wei,Dajun Shu

2024-06-11

Abstract:Understanding the atomistic mechanism in graphene growth is crucial for controlling the number of layers or domain sizes to meet practical needs. In this work, focusing on the growth of graphene by chemical vapor deposition on copper substrates, the surface kinetics in the growth are systematically investigated by first-principles calculations. The phase diagram, predicting whether the growth mode is monolayer graphene or bilayer graphene under various experimental conditions, is constructed based on classical nucleation theory. Our phase diagram well illustrates the effect of high hydrogen pressure on bilayer graphene growth and clarifies the mechanism of the most widely used experimental growth approaches. The phase diagram can provide guidance and predictions for experiments and inspires the study of other two-dimensional materials with graphene-like growth mechanisms.

Materials Science

What problem does this paper attempt to address?

This paper mainly explores the phase diagram and growth mode of graphene grown on a copper substrate by chemical vapor deposition (CVD). The researchers systematically studied the dynamic properties of carbon monatomic atoms on the copper surface through first-principles calculations, and constructed a phase diagram that predicts the growth mode under different experimental conditions based on classical nucleation theory.

The growth mechanism of graphene is crucial for controlling the number of layers and domain size to meet practical requirements. In CVD growth, methane is used as the carbon source and copper is used as the substrate. The study found that the surface kinetic processes have a significant impact on the growth of single-layer and bilayer graphene. The researchers paid particular attention to the effect of hydrogen gas pressure on the growth of bilayer graphene and elucidated the mechanism of widely used experimental growth methods.

The paper mentions that thin film growth typically follows a "wedding cake" model, but in the observed reverse wedding cake model in low-pressure CVD experiments, the second layer of graphene nucleates below the first layer and competes to grow. High hydrogen gas pressure is conducive to the growth of bilayer graphene, and the presence of hydrogen can passivate the graphene edges and promote bilayer growth.

The researchers analyzed the adsorption, diffusion, and adhesion processes of carbon monatomic atoms on the copper surface through energy profiles and geometric configurations of different growth steps. They found that in the presence of hydrogen gas, carbon atoms are more likely to adsorb near the edges of graphene, reducing the growth barrier and affecting the growth mode.

The phase diagram constructed in the paper determines the conditions for the growth of bilayer graphene based on surface kinetics and nucleation theory, providing guidance for experiments and inspiration for the study of other two-dimensional materials with similar growth mechanisms. By adjusting experimental conditions such as surface modification, gas ratio, or pressure, the growth mode of graphene can be controlled to achieve selective growth of single-layer or bilayer graphene.