Abstract:The growth of graphene during Cu-catalyzed chemical vapor deposition was studied using 12CH4 and 13CH4 precursor gasses. We suggest that the growth begins by the formation of a multilayer cluster. This seed increases its size but the growth speed of a particular layer depends on its proximity to the copper surface. The layer closest to the substrate grows fastest and thus further limits the growth rate of the upper layers. Nevertheless, the growth of the upper layers continues until the copper surface is completely blocked. It is shown that the upper layers can be removed by modification of the conditions of the growth by hydrogen etching.

What problem does this paper attempt to address?

This paper aims to solve the problem of the formation of bilayer or multilayer regions of graphene during the copper - catalyzed chemical vapor deposition (Cu - CVD) process. Specifically, the researchers are concerned with how to control the multilayer structures formed when graphene grows on the copper surface, especially the formation mechanism of bilayer structures and their suppression methods. ### Research Background - **Large - scale production of graphene**: Graphene has broad application prospects in electronic devices due to its excellent electrical and mechanical properties. However, large - scale preparation of high - quality, uniform graphene films remains a challenge. - **Cu - CVD method**: Copper is widely used as a catalyst in the chemical vapor deposition (CVD) preparation of graphene. Unlike nickel, the solubility of carbon in copper is extremely low, so graphene is directly formed on the copper surface, and the growth process is self - limiting, and theoretically only a single - layer graphene should be generated. - **Problem of multilayer graphene**: Although the Cu - CVD method should theoretically generate single - layer graphene, in actual operation, small - scale bilayer or multilayer regions often occur, which will affect the uniformity and quality of the graphene film. ### Research Objectives - **Understand the formation mechanism of multilayer graphene**: By using methane gases labeled with isotopes (12CH₄ and 13CH₄) as precursors, the researchers attempt to reveal the detailed process of the formation of multilayer graphene. - **Suppress the formation of multilayer graphene**: Based on the understanding of the formation mechanism of multilayer graphene, the researchers explore methods to suppress or remove multilayer graphene by modifying the growth conditions. ### Main Findings - **Formation mechanism of multilayer graphene**: Research shows that the formation of multilayer graphene begins with the formation of a multilayer seed, and then each layer grows independently, but the growth rate of the top layer is significantly slower than that of the bottom layer. - **Hydrogen etching method**: By introducing a hydrogen etching step during the growth process, the top - layer multilayer graphene can be effectively removed, thereby obtaining a more uniform single - layer graphene film. ### Experimental Methods - **Isotope labeling method**: Use 12CH₄ and 13CH₄ alternately as precursors, and analyze the carbon isotope distribution in different regions through Raman spectroscopy to track the growth process of graphene. - **Hydrogen etching**: After the methane source is turned off, continue to introduce hydrogen, and remove the top - layer multilayer graphene through hydrogen etching. ### Conclusion This study reveals the formation mechanism of multilayer graphene through the isotope labeling method and proposes an effective method to remove multilayer graphene through hydrogen etching, providing new ideas and technical means for the preparation of high - quality, uniform single - layer graphene.

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