Abstract:Graphene, the atomic thin carbon film with honeycomb lattice, holds great promise in a wide range of applications, due to its unique band structure and excellent electronic, optical, mechanical, and thermal properties. Scientists are researching this star material because of the development of various emerging preparation techniques, among which chemical vapor deposition (CVD) has received the fastest advances in the past few years. For the CVD growth of graphene, the ultimate goal is to achieve the highest quality in the largest scale and lowest cost with a precise control of layer thickness, stacking order, and crystallinity. To meet this goal, researchers need a comprehensive understanding and effective controlling of the growth process, especially to its elementary steps. In this Account, we focus on our recent progresses toward the controlled surface growth of graphene and its two-dimensional (2D) hybrids via rational designs of CVD elementary processes, namely, process engineering. A typical CVD process consists of four main elementary steps: (A) adsorption and catalytic decomposition of precursor gas, (B) diffusion and dissolution of decomposed carbon species into bulk metal, (C) segregation of dissolved carbon atoms onto the metal surface, and finally, (D) surface nucleation and growth of graphene. Absence or enhancement of each elementary step would lead to significant changes in the whole growth process. Metals with certain carbon solubility, such as nickel and cobalt, involve all four elementary steps in a typical CVD process, thus providing us an ideal system for process engineering. The elementary segregation process can be completely blocked if molybdenum is introduced into the system as an alloy catalyst, yielding perfect monolayer graphene almost independent of growth parameters. On the other hand, the segregation-only process of predissolved solid carbons is also capable of high-quality graphene growth. By using a synergetic Cu-Ni alloy, we are able to further enhance the control to such a segregation technique, especially for the thickness of graphene. By designing a cosegregation process of carbon atoms with other elements, such as nitrogen, doped graphene could be synthesized directly with a tunable doping profile. Copper with negligible carbon solubility provides another platform for process engineering, where both carbon dissolution and segregation steps are negligible in the CVD process. Carbon atoms decomposed from precursors diffuse on the surface and build up the thermodynamically stable honeycomb lattice. As a result, graphene growth on copper is self-limited, and formation of multilayer graphene is generally prohibited. Being able to control this process better, as well as the high quality produced, makes copper-based growth the dominating synthesis procedure in the graphene community. We designed a two-temperature zone system to spatially separate the catalytic decomposition step of carbon precursors and the surface graphitization step for breaking this self-limited growth feature, giving high-quality Bernal stacked bilayer graphene via van der Waals epitaxy. We performed the so-called wrinkle engineering by growing graphene on nanostructured copper foil together with a structure-preserved surface transfer. In such a way, we controlled the wrinkling or folding on graphene and further fabricated graphene nanoribbon arrays by self-masked plasma etching. Moreover, by designing a two-step patching growth process on copper, we succeeded in synthesizing the mosaic graphene, a patchwork of intrinsic and nitrogen-doped graphene connected by single crystalline graphene p-n junctions. By following a general concept of process engineering, our work on the designed CVD growth of graphene and its 2D hybrids provides a unique insight of this research field. It enables the precise growth control of graphene together with the in-depth understanding of CVD growth process, which would further stimulate the pace of graphene applications.

Topology evolution of graphene in chemical vapor deposition, a combined theoretical/experimental approach toward shape control of graphene domains.

Graphene thickness control via gas-phase dynamics in chemical vapor deposition

Etching-Controlled Growth of Graphene by Chemical Vapor Deposition

Chemical Vapor Deposition Growth of Graphene Domains Across the Cu Grain Boundaries

Elucidation of heterogeneous graphene nucleation and growth through Cu surface engineering

Roles of Transition Metal Substrates in Graphene Chemical Vapor Deposition Growth

Unveiling the Competitive Role of Etching in Graphene Growth During Chemical Vapor Deposition

Effects Of Thermally-Induced Changes Of Cu Grains On Domain Structure And Electrical Performance Of Cvd-Grown Graphene

Controllable Growth of Shaped Graphene Domains by Atmospheric Pressure Chemical Vapour Deposition

Designed CVD growth of graphene via process engineering.

First-Principles Thermodynamics of Graphene Growth on Cu Surfaces

Theoretical Study of Chemical Vapor Deposition Synthesis of Graphene and Beyond: Challenges and Perspectives.

An All-Atom Kinetic Monte Carlo Model for Chemical Vapor Deposition Growth of Graphene on Cu(1 1 1) Substrate

Gas-phase Dynamics in Graphene Growth by Chemical Vapour Deposition

A Kinetic Monte Carlo Model for the Growth and Etching of Graphene During Chemical Vapor Deposition

The control of graphene double-layer formation in copper-catalyzed chemical vapor deposition

Elementary Process for CVD Graphene on Cu(110): Size-selective Carbon Clusters

Atom-resolved study of CVD graphene on Rh substrates and its intriguing properties by STM / STS

Operando Characterization and Molecular Simulations Reveal the Growth Kinetics of Graphene on Liquid Copper during Chemical Vapor Deposition

Recent Understanding in the Chemical Vapor Deposition of Multilayer Graphene: Controlling Uniformity, Thickness, and Stacking Configuration

Invisible vapor catalysis in graphene growth by chemical vapor deposition