The role of per-hydroxyl in the multiwall carbon nanotube growth by PECVD

Qiang Chen,Yabo Fu,Chunmei Zhang,Yuefei Zhang
2007-01-01
Abstract:Multiwall carbon nanotubes were grown by the plasma enhanced chemical vapor deposition (PECVD) method in downstream at the temperature of c.a. 750°C in Si (100) substrate. Besides the precursor of methane for carbon source and hydrogen as the ablation, ammonia/H2O was inlet into the reactive chamber at the pressure of 0.05MPa. With the characterizations of the tube structure and the measurement by carbon nano-tube (CNT) yield, the role of perhydroxyl in multiwall carbon nanotubes growth is explored. It is found that in addition of a proper amount of H2O (~0.1%), a high-purity nanotube can be grown in downstream. But no CNT could be synthesized or even the carbon matrix was appeared in excess H2O condition. The mechanism of the mutliwall CNT growth controlled by active radical per-hydroxyl is assumed in this paper.
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