The Role of Hydroxyl and Atomic Oxygen in Multiwall Carbon Nanotube Growth

Qiang Chen,Ya-bo Fu,Chun-mei Zhang,Yue-fei Zhang,Li-zheng Yang
DOI: https://doi.org/10.1007/s11706-008-0004-x
2008-01-01
Frontiers of Materials Science in China
Abstract:Multiwall carbon nanotubes (CNTs) were grown by the plasma-enhanced chemical vapor deposition (PECVD) method in downstream on the p-Si (100) substrate. Besides precursors, methane as the carbon source and hydrogen as the ablation, oxygen or H 2 O was alternatively inlet into the reactive chamber at the pressure of 0.05 MPa. Given characterizations of the tube structure and tube mass weight, the role of radical atomic O, hydroxyl and perhydroxyl in multiwall CNT growth was explored. In addition to a small amount of O 2 (∼0.67%) or H 2 O (∼0.1%), it was found that a high quantity of pure nanotubes can be grown in the downstream. However, no nanotube could be formed or even the carbon matrix generated when the concentration of O 2 or H 2 O exceeded a proper value in the mixture. The mechanism of multiwall CNT growth controlled by active radicals was explored in this paper.
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