Abstract:Epitaxial growth is a promising strategy to produce high-quality graphene samples. At the same time, this method has great flexibility for industrial scale-up. To optimize growth protocols, it is essential to understand the underlying growth mechanisms. This is, however, very challenging, as the growth process is complicated and involves many elementary steps. Experimentally, atomic-scale in situ characterization methods are generally not feasible at the high temperature of graphene growth. Therefore, kinetics is the main experimental information to study growth mechanisms. Theoretically, first-principles calculations routinely provide atomic structures and energetics but have a stringent limit on the accessible spatial and time scales. Such gap between experiment and theory can be bridged by atomistic simulations using first-principles atomic details as input and providing the overall growth kinetics, which can be directly compared with experiment, as output. Typically, system-specific approximations should be applied to make such simulations computationally feasible. By feeding kinetic Monte Carlo (kMC) simulations with first-principles parameters, we can directly simulate the graphene growth process and thus understand the growth mechanisms. Our simulations suggest that the carbon dimer is the dominant feeding species in the epitaxial growth of graphene on both Cu(111) and Cu(100) surfaces, which enables us to understand why the reaction is diffusion limited on Cu(111) but attachment limited on Cu(100). When hydrogen is explicitly considered in the simulation, the central role hydrogen plays in graphene growth is revealed, which solves the long-standing puzzle into why H should be fed in the chemical vapor deposition of graphene. The simulation results can be directly compared with the experimental kinetic data, if available. Our kMC simulations reproduce the experimentally observed quintic-like behavior of graphene growth on Ir(111). By checking the simulation results, we find that such nonlinearity is caused by lattice mismatch, and the induced growth front inhomogeneity can be universally used to predict growth behaviors in other heteroepitaxial systems. Notably, although experimental kinetics usually gives useful insight into atomic mechanisms, it can sometimes be misleading. Such pitfalls can be avoided via atomistic simulations, as demonstrated in our study of the graphene etching process. Growth protocols can be designed theoretically with computational kinetic and mechanistic information. By contrasting the different activation energies involved in an atom-exchange-based carbon penetration process for monolayer and bilayer graphene, we propose a three-step strategy to grow high-quality bilayer graphene. Based on first-principles parameters, a kinetic pathway toward the high-density, ordered N doping of epitaxial graphene on Cu(111) using a CNCl precursor is also identified. These studies demonstrate that atomistic simulations can unambiguously produce or reproduce the kinetic information on graphene growth, which is pivotal to understanding the growth mechanism and designing better growth protocols. A similar strategy can be used in growth mechanism studies of other two-dimensional atomic crystals.

Molecular dynamics simulation study of graphene synthesis by rotating arc plasma

Molecular Understanding of the Effect of Hydrogen on Graphene Growth by Plasma-Enhanced Chemical Vapor Deposition

Controlling the Nucleation and Growth Orientation of Nanocrystalline Carbon Films during Plasma-Assisted Deposition: A Reactive Molecular Dynamics/Monte Carlo Study

Operando Characterization and Molecular Simulations Reveal the Growth Kinetics of Graphene on Liquid Copper during Chemical Vapor Deposition

The morphological transformation of carbon materials from nanospheres to graphene nanoflakes by thermal plasmas

Atomistic Simulations of Graphene Growth: From Kinetics to Mechanism.

Synthesis of Few-Layer Graphene Flakes by Magnetically Rotating Arc Plasma: Effects of Input Power and Feedstock Injection Position

Numerical Simulation of a Simplified Reaction Model for the Growth of Graphene via Chemical Vapor Deposition in Vertical Rotating Disk Reactor

Numerical investigation on the effect of gas-phase dynamics on graphene growth in chemical vapor deposition

The nucleation and growth of graphene under a controlled atmosphere during radio frequency-plasma-enhanced chemical vapor deposition

Gas-phase Dynamics in Graphene Growth by Chemical Vapour Deposition

Critical Crystal Growth of Graphene on Dielectric Substrates at Low Temperature for Electronic Devices.

Experimental study of graphene synthesis by different gas-doped plasma

Molecular dynamics simulation of graphene sinking during chemical vapor deposition growth on semi-molten Cu substrate

Conversion of Coalbed Methane Surrogate into Hydrogen and Graphene Sheets Using Rotating Gliding Arc Plasma

On the plasma-based growth of ‘flowing’ graphene sheets at atmospheric pressure conditions

Graphene Modification Based on Plasma Technologies

Process optimization of graphene growth in a roll-to-roll plasma CVD system

Growth of Graphene on Cu Foils by Microwave Plasma Chemical Vapor Deposition: the Effect of In-Situ Hydrogen Plasma Post-Treatment

Molecular Dynamics Simulation of Plasma Surface Interaction

Oxygen-Promoted Chemical Vapor Deposition of Graphene on Copper: A Combined Modeling and Experimental Study