Abstract:In the growth of thick GaN films by hydride vapor phase epitaxy (HVPE), severe parasitic depositions occur on the reactor walls, which will decrease the growth rate and the quality of films.Numerical modelings were conducted for the parasitic depositions of GaN growth in a large-size vertical HVPE reactor.Through comparison of modeling results with experimental data, the distribution of the parasitic deposition on reactor walls and the GaN growth rate were investigated, especially, the relationship between the flow rate of N2 carrier gas and the parasitic deposition were determined.The results show that at the base condition, the top wall parasitic deposition rate decreases gradually from center to edge, in agreement with the experimental result.For the side wall deposition there are eight high parasitic deposition zones, corresponding to GaCl nozzle tubes, indicating that the deposition mainly depends on the GaCl mass transport.The predicted growth rate at graphite susceptor is lower than the experimental one, but the trend is consistent.Keeping other conditions unchanged, increasing the flow rate of the NH3 carrier gas N2, the parasitic deposition rates and distribution areas of both top and side walls increase, while the growth rate on graphite susceptor decreases and uniformity has been increases;increasing the flow rate of the GaCl carrier gas N2, the parasitic deposition rate and the distribution area are reduced both on top and side walls, while the growth rate on graphite susceptor increases and uniformity has been decreases.The results provide theoretical reference for the optimization of GaN growth in large-size HVPE reactor.

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