Abstract:GaN based high electron mobility transistors show promise in numerous device applications which elicits the need for accurate models of bulk, surface, and interface electronic properties. We detail here a hybrid density functional theory study of zinc blende (zb) GaN and diamond bulk and surface properties, and zb GaN on diamond interfaces using slab supercell models. Details are provided on the dependence of electronic properties with respect to supercell size, the use of pseudo-hydrogen to passivate the bottom GaN layer, and dipole corrections. The large bulk modulus of diamond provides a templating structure for GaN to grow upon, where a large lattice mismatch is accounted for through the inclusion of a cationic Ga adlayer. Looking at both type I and II surfaces and interfaces of GaN shows the instability of zb GaN without an adlayer (type II), where increased size, pseudo-hydrogen passivation and dipole corrections do not remove the spurious interaction between the top and bottom layers in type II GaN. Layer dependent density of states, local potential differences, and charge density differences show that the type I interface (with a Ga adlayer) is stable with an adhesion energy of 0.704 eV/Å2 (4.346 J/m2); interestingly, the diamond charge density intercalates into the first layer of GaN, which was seen experimentally for wurtzite GaN grown over diamond. The type II interface is shown to be unstable which implies that, to form a stable, thin-film zb interface between GaN and diamond, the partial pressure of trimethylgallium must be controlled to ensure a Ga layer exists both on the top and bottom layer of the GaN thin film atop the diamond. We believe our results can shed light towards a better understanding of the GaN/diamond multifaceted interface present in the GaN overgrowth on diamond samples.

Relaxations of Nonpolar Zinc Blende (110) Surface of GaN, AlN, and BN

ChemInform Abstract: GaN Crystals Prepared Through Solid‐State Metathesis Reaction from NaGaO2 and BN under High Pressure and High Temperature.

Clean and As-Covered Zinc-Blende GaN (001) Surfaces: Novel Surface Structures and Surfactant Behavior

First-Principles Calculations of Band-Gap Properties of Zinc-Blende Bxga1-Xn and Bxga1-Xnyas1-Y Alloys

The Transition Metal Surface Passivated Edges of Hexagonal Boron Nitride (H-Bn) and the Mechanism of H-Bn's Chemical Vapor Deposition (CVD) Growth

Influence of Different Surface-Passivation Dielectrics on High-Temperature Strain Relaxation of AlGaN in AlGaN∕GaN Heterostructures

Anisotropic Strain Relaxation and High Quality AlGaN/GaN Heterostructures on Si (110) Substrates

Subangstrom profile imaging of relaxed ZnO(101̄0) surfaces

Surface structure and bonding of the cleavage faces of tetrahedrally coordinated II–VI compounds

Subangstrom profile imaging of relaxed ZnO(10 ̅10) surfaces.

Hybrid density functional theory study on zinc blende GaN and diamond surfaces and interfaces: Effects of size, hydrogen passivation and dipole corrections

Temperature-dependent Strain Relaxation of the AlGaN Barrier in AlGaN∕GaN Heterostructures with and Without Si3N4 Surface Passivation

Spin Relaxation Induced by Interfacial Effects in GaN/Al0.25Ga0.75N Heterostructures

Strain relaxation in GaN grown on vicinal 4H-SiC(0001) substrates

Band Alignments of Emerging Wurtzite BAlN and BGaN Semiconductors

Accurate Surface Band Bending Determination on Ga-polar N-Type GaN Films by Fitting X-Ray Valence Band Photoemission Spectrum

Research on the Stability of Different Polar Surfaces in Aluminum Nitride Single Crystals

Metastability Of Single-Bonded Cubic-Gauche Structure Of N Under Ambient Pressure

Influence of relaxation on the two-dimensional electron-gas in Al xGa1-xN/GaN/AlyGa1-yN double heterostructure with compressively strained GaN layer

Exploring electronic properties, surface energies and cleavage energies of low-Index surfaces of AlB 2 by first-principles calculation

Surface relaxation and stress of fcc metals: Cu, Ag, Au, Ni, Pd, Pt, Al and Pb