Abstract:This work expands the knowledge of the fundamental properties of BxAl1−xN, guiding their application. Using ab‐initio simulations, it is showed that they exhibit large tunable bandgaps (6.2–7.5 eV), dielectric constants (6–12 ɛ0), and electric breakdown fields (10–35 MV cm−1). This is the first study that presents their GW0 bandstructures, effective masses, DFT computed dielectric constants, and machine learning predicted electric breakdown fields. Ultra‐wide bandgap (UWBG) materials such as AlN and BN hold great promise for future power electronics due to their exceptional properties. They exhibit large bandgaps, high breakdown fields, high thermal conductivity, and high mechanical strengths. AlN and BN have been extensively researched, however, their alloys, BxAl1−xN, are much less studied despite their ability to offer tunable properties by adjusting x. In this article, the electronic properties of 17 recently predicted ground states of BxAl1−xN in the x = 0 − 1 range are predicted using first‐principles density functional theory and many‐body perturbation theory within GW approximation. All the BxAl1−xN structures are found to be UWBG materials and have bandgaps that vary linearly from that of wurtzite‐phase (w) AlN (6.19 eV) to that of w‐BN (7.47 eV). The bandstructures of BxAl1−xN show that a direct‐to‐indirect bandgap crossover occurs near x = 0.25. Furthermore, it is found that BxAl1−xN alloys have much larger dielectric constants than the constituent bulk materials (AlN = 9.3 ɛ0 or BN = 7.3 ɛ0), with values reaching as high as 12.1 ɛ0. These alloys are found to exhibit large dielectric breakdown fields in the range 9–35 MV cm−1 with a linear dependence on x. This work provides the much needed advancement in the understanding of the properties of BxAl1−xN to aid their application in next‐generation devices.

Band Alignments of Emerging Wurtzite BAlN and BGaN Semiconductors

Natural band alignment of BAlN and BGaN alloys

First-Principles Calculations of Band-Gap Properties of Zinc-Blende Bxga1-Xn and Bxga1-Xnyas1-Y Alloys

Lattice-constant and band-gap tuning in wurtzite and zincblende BInGaN alloys

Optical properties of BAlN and BGaN for applications in latticematched UV optical structures

An experimental study of the energy band alignments of B(Al, Ga)N heterojunctions

Band structures and direct-to-indirect bandgap transitions in BAlN and BGaN alloys: a first principle study

Phase transition and bandgap engineering in B1-Al N alloys: DFT calculations and experiments

Bandgap Characteristics of Boron-Containing Nitrides—Ab Initio Study for Optoelectronic Applications

Electronic Properties of Ultra-Wide Bandgap B$_x$Al$_{1-x}$N Computed from First-Principles Simulations

Electronic Properties of Ultra‐Wide Bandgap BxAl1−xN Computed from First‐Principles Simulations

Ab initio calculation of structural and electronic properties of Al$_x$Ga$_{1-x}$N and In$_x$Ga$_{1-x}$N alloys

Band parameters for III–V compound semiconductors and their alloys

Band Alignment of AlN/β-Ga2O3 Heterojunction Interface Measured by X-Ray Photoelectron Spectroscopy

Engineering the Electronic, Thermoelectric, and Excitonic Properties of Two-Dimensional Group-III Nitrides through Alloying for Optoelectronic Devices (B1- xAlxN, Al1- xGaxN, and Ga1- xInxN)

Band alignment of orthorhombic Ga2O3 with GaN and AlN semiconductors

Type-II band alignment AlN/InSe van der Waals heterostructure: Vertical strain and external electric field

Universal bandgap bowing in group-III nitride alloys

Ab-initio Prediction of Ultra-Wide Band Gap B$_x$Al$_{1-x}$N Materials

Narrow bandgap group III-nitride alloys

Band gap bowing for high In content InAlN films