Abstract:This work expands the knowledge of the fundamental properties of BxAl1−xN, guiding their application. Using ab‐initio simulations, it is showed that they exhibit large tunable bandgaps (6.2–7.5 eV), dielectric constants (6–12 ɛ0), and electric breakdown fields (10–35 MV cm−1). This is the first study that presents their GW0 bandstructures, effective masses, DFT computed dielectric constants, and machine learning predicted electric breakdown fields. Ultra‐wide bandgap (UWBG) materials such as AlN and BN hold great promise for future power electronics due to their exceptional properties. They exhibit large bandgaps, high breakdown fields, high thermal conductivity, and high mechanical strengths. AlN and BN have been extensively researched, however, their alloys, BxAl1−xN, are much less studied despite their ability to offer tunable properties by adjusting x. In this article, the electronic properties of 17 recently predicted ground states of BxAl1−xN in the x = 0 − 1 range are predicted using first‐principles density functional theory and many‐body perturbation theory within GW approximation. All the BxAl1−xN structures are found to be UWBG materials and have bandgaps that vary linearly from that of wurtzite‐phase (w) AlN (6.19 eV) to that of w‐BN (7.47 eV). The bandstructures of BxAl1−xN show that a direct‐to‐indirect bandgap crossover occurs near x = 0.25. Furthermore, it is found that BxAl1−xN alloys have much larger dielectric constants than the constituent bulk materials (AlN = 9.3 ɛ0 or BN = 7.3 ɛ0), with values reaching as high as 12.1 ɛ0. These alloys are found to exhibit large dielectric breakdown fields in the range 9–35 MV cm−1 with a linear dependence on x. This work provides the much needed advancement in the understanding of the properties of BxAl1−xN to aid their application in next‐generation devices.

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