ChemInform Abstract: GaN Crystals Prepared Through Solid‐State Metathesis Reaction from NaGaO2 and BN under High Pressure and High Temperature.

Huan Ma,Duanwei He,Li Lei,Shanmin Wang,Ying Chen,Haikuo Wang

DOI: https://doi.org/10.1002/chin.201112012

2011-01-01

ChemInform

Abstract:AbstractNaGaO2 is prepared by reaction of Ga2O3 and Na2CO3 (1100 °C, 12 h) and converted to GaN by reaction with BN (5 GPa, 1600 °C, 30 min).

What problem does this paper attempt to address?

Amorphous GaN: Polyamorphism and crystallization at high pressure

Murat Durandurdu

DOI: https://doi.org/10.1016/j.commatsci.2024.113062

IF: 3.572

2024-05-02

Computational Materials Science

Abstract:Employing constant pressure ab initio simulations, we have shed light on the previously unknown high-pressure behavior of amorphous gallium nitride. Our findings reveal a two-step transformation sequence under pressure. The initial transition involves a polyamorphic transformation from a low-density amorphous (LDA) phase to a high-density amorphous (HDA) phase with an average coordination number of 5.4. Upon pressure release, the HDA state partially reverts to a denser amorphous network with a higher coordination number (4.34) compared to the original LDA phase. Further pressurization triggers the crystallization of the HDA state into a rocksalt structure. Remarkably, the electronic structure of the amorphous forms of GaN exhibits insignificant sensitivity to changes in coordination number, maintaining a band gap of approximately 1.7–2.0 eV across all phases.

materials science, multidisciplinary
Fabrication of Gan Nanodots Via Gan Thermal Decomposition in H-2 Atmosphere

Xiong Hui,Jin Zhang,Senlin Li,Hu Wang,Yanyan Fang,Jiangnan Dai,Changqing Chen

DOI: https://doi.org/10.1116/1.4819128

2013-01-01

Abstract:GaN nanodots were fabricated by thermal decomposition of GaN in H2 atmosphere at high temperatures. By varying annealing time and temperature, it was found that dot size and density were highly dependent on annealing conditions. Surface morphology of the sample indicates that the dot formation mechanism is chemical erosion under H2 flow. The etching proceeds in lateral directions, and the dots are formed in hexagonal pit areas. The fitted activation energy of GaN decomposition agrees well with the chemical properties of GaN in the experimental conditions.
A Benzene-Thermal Synthetic Route to Nanocrystalline GaN

Y Xie,YT Qian,WZ Wang,SY Zhang,YH Zhang

DOI: https://doi.org/10.1126/science.272.5270.1926

IF: 56.9

1996-01-01

Science

Abstract:A thermal reaction of Li 3 N and GaCl 3 in which benzene was used as the solvent under pressure has been carried out for the preparation of 30-nanometer particles of gallium nitride (GaN) at 280°C. This temperature is much lower than that of traditional methods, and the yield of GaN reached 80%. The x-ray powder diffraction pattern indicated that sample was mainly hexagonal-phase GaN with a small fraction of rocksalt-phase GaN, which has a lattice constant a = 4.100 angstroms. This rocksalt structure, which had been observed previously only under high pressure (at least 37 gigapascals) was observed directly with high-resolution electron microscopy.
Large-scale Synthesis of Single-Phase, High-Quality GaN Nanocrystallites

J.C. Wang,D.P. Yu,C.Y. Li,J.F. Zhou,Y.Z. Wang,S.Q. Feng

DOI: https://doi.org/10.1007/s00339-002-2042-z

2004-01-01

Applied Physics A

Abstract:Large-scale synthesis of high-quality GaN nano-crystallites has been achieved by direct reaction of a 4:1 molar Ga/Ga2O3 mixture with ammonia at 950 °C. X-ray diffraction, transmission electron microscopy, selected-area electron diffraction and high-resolution transmission electron microscopy revealed that the produced GaN nanocrystallites were single hexagonal wurtzite structure with an average particle size around 45 nm. A sharp near band edge emission peak and a blue light emission peak were observed in photoluminescence spectroscopy. The synthesis approach is simple and easy to be commercialized.
Crystallization Behavior of Amorphous Si2bc3n Ceramic Monolith Subjected to High Pressure

Bin Liang,Zhihua Yang,Qingqing Chen,Shengjin Wang,Xiaoming Duan,Dechang Jia,Yu Zhou,Kun Luo,Dongli Yu,Yongjun Tian

DOI: https://doi.org/10.1111/jace.13807

IF: 4.186

2015-01-01

Journal of the American Ceramic Society

Abstract:The crystallization behavior of amorphous Si2BC3N monoliths by heating at 1000°C–1400°C and 5 GPa was investigated with the special attention to the nucleation mechanisms of β‐SiC and BN(C) phases. Nanoscale puckered structures arising in particle bridging areas were found and its evolution behavior well reflected the nucleation process of nanocrystallites. The temperature‐dependent crystallization of amorphous Si2BC3N monoliths at 5 GPa passes through four stages: The material remains amorphous below 1100°C. It undergoes partial phase segregation (1100°C–1200°C), followed by initiation of nucleation (1200°C–1250°C), and then nucleation and growth of β‐SiC and turbostratic BN(C) crystallites (>1250°C). The first principles calculation indicates the nucleation precedence of BN(C) phase over β‐SiC. BN(C) nucleates preferentially at bridges between ceramic particles causing SiC to concentrate in particle interiors thus forming capsule‐like structures.
Formation of Cubic GaN Nanocrystals: A Study of the Thermal Stability of GaP Nanocrystals under Nitrogen

Shanmin Gao,Liying Zhu,Yi Xie,Xiaobo Qian

DOI: https://doi.org/10.1002/ejic.200300383

IF: 2.551

2004-01-01

European Journal of Inorganic Chemistry

Abstract:Cubic GaN nanoparticles and nanorods have been successfully synthesized from the nitridation of nanocrystalline GaP at 500 degreesC for 30 min, by manipulating different heating rates in nitrogen. The results of the thermal stability studies of nanocrystalline GaP under N-2 at different heating rates support the idea that cubic GaN can form from GaP via a N-P metathesis mechanism. The morphology of the cubic GaN can be controlled by variation of the external synthetic para-meters such as the rate of heating. This work shows that it is very simple to synthesize cubic GaN nanoparticles or nanorods and opens a wide route towards detailed studies of the fundamental properties and potential applications of semiconductor nanocrystals. ((C) Wiley-VCH Verlag GmbH & Co. KGaA, 69451 Weinheim, Germany, 2004).
Low-temperature Synthesis and Characterization of GaN Nanocrystals from Gallium Trichloride Precursor

Liu F. S.,Liu Q. L.,International Centre for Materials Physics,Southwest University of Science and Technology,Yang L. T.,Luo J.,Zhou Y. Q.,Dong H. W.,Rao G. H.

DOI: https://doi.org/10.1557/jmr.2004.0448

IF: 2.7

2004-01-01

Journal of Materials Research

Abstract:Gallium nitride (GaN) has been synthesized by reacting gallium trichloride with ammonia (NH3) at low temperatures ranging from 500 to 1000 °C for 12 h. X-ray diffraction, transmission electron microscopy, infrared, and Raman backscattering spectra revealed that the synthesized GaN powder consists of single-phase nano-sized crystallites with the wurtzite-type structure. The average size of the crystals decreases with the reaction temperature from approximately ~63 nm at 1000 °C to ~5 nm at 500 °C. GaOCl and ∈-Ga2O3 are the intermediate products during synthesis of the GaN. Characteristic shifts of the Raman peaks are associated with the change in crystal size. The band-edge emission of GaN at 361 nm was observed on room temperature photoluminescence spectra exclusively for the sample synthesized at 1000 °C, while a new and broad emission band appeared with the center ranging from 827 to 765 nm for the samples synthesized between 500 and 800 °C.
A Benzene-Thermal Metathesis Route to Pure Metastable Rocksalt GaN

F Xu,Y Xie,X Zhang,SY Zhang,L Shi

DOI: https://doi.org/10.1039/b208477e

2003-01-01

ChemInform

Abstract:Here, pure metastable rocksalt GaN was first prepared via a benzene-thermal metathesis route through the reaction of GaI3 and NaNH2 at 210 degreesC and under 3 MPa pressure, in which I-2 acted as the transporting agent. The as-prepared product was characterized by X-ray powder diffraction (XRD), transmission electron microscopy (TEM), selected-area electron diffraction (SAED) and high-resolution transmission electron microscopy (HRTEM). X-Ray photoelectron spectra (XPS) were used to determine the average composition ratio, which is Ga: N = 1.14: 1. The photoluminescence spectrum shows that the rocksalt GaN emits two PL peaks positioned at 330 and 348 nm.
Thermodynamic Calculations of the Fe–Ga–N Melting Diagram in the Context of Gallium Nitride Crystallization under High Temperatures and Pressures

V. Z. Turkevych,Yu. Yu. Rumiantseva,Yu. I. Sadova,O. V. Kushch,I. O. Hladkyi,D. V. Turkevych

DOI: https://doi.org/10.3103/S1063457622020083

2022-06-26

Journal of Superhard Materials

Abstract:The problem of constructing the ternary Fe–Ga–N melting diagram under atmospheric and high (4 and 6 GPa) pressures was studied to find the thermodynamic stability region of gallium nitride (GaN), a wide-bandgap semiconductor material. Thermodynamic calculations were performed by using the models of phenomenological thermodynamics. The principal possibility of the synthesis of GaN crystals under high temperature and pressures with the use of iron as a dissolving alloy was proven. Some recommendations on the optimization of thermodynamic and kinetic parameters for the synthesis of GaN crystals by the temperature gradient method were given to improve their quality.

materials science, multidisciplinary
Preparation of Gan Nanowires by Nonammonia Method and Their Photoelectronic Properties

Zhao Jun-Wei,Zhang Yue-Fei,Song Xue-Mei,Yan Hui,Wang Ru-Zhi

DOI: https://doi.org/10.7498/aps.63.117702

IF: 0.906

2014-01-01

Acta Physica Sinica

Abstract:Single-crystal hexagonal wurtzite GaN nanowires were successfully synthesized by using plasma-enhanced chemical vapor deposition (PECVD) via vapor-liquid-solid (V-L-S) mechanism, under the condition of non-ammonia at 1050 ℃. Raman spectra show that the as-synthesized nanowires have large disorder surface, in which there is a significantly small size effect. Furthermore, it is also observed that the prepared nanowires have typical photoluminescence characteristics and good field emission properties.
Nitrogen-rich GaN5 and GaN6 As High Energy Density Materials with Modest Synthesis Condition

Zhao Liu,Da Li,Shuli Wei,Yan Liu,Fubo Tian,Defang Duan,Tian Cui

DOI: https://doi.org/10.1016/j.physleta.2019.125859

IF: 2.707

2019-01-01

Physics Letters A

Abstract:Here, the energetic gallium nitrides with the network and zigzag poly-nitrogen configurations at modest pressures have been predicted. The nitrogen-rich Cmc21-GaN5, high-pressure P21/m-GaN5 and C2/c-GaN6 phases can release higher energy of ∼3.27 kJg−1, 4.12 kJg−1, 5.71 kJg−1, respectively, which are close to or even higher than that of the traditional high energy density materials TNT and possess distinguished detonation performance simulated. The predicted synthesis pressures of GaN5 and GaN6 (25 and 50 GPa) are much lower than that of the famous atomic cg-N. The VSEPR theory and Zintl-Klemm concept are employed to reasonably explain the bonding properties of N-N bonds in locally environments. High pressures modulate the electron transfer between the different orbits and further induce higher energy density. The conjugation effect of π electrons in planar polymeric nitrogen chains is the main reason for the metallization of gallium nitrides.
Synthesis of gallium nitride (GaN) powder by ammoniating Ga2O3 under high temperature

Zhencui Sun,Wentian Cao,Qinqin Wei,ChengShan Xue

DOI: https://doi.org/10.3321/j.issn:1002-185x.2004.08.020

2004-01-01

Rare Metal Materials and Engineering

Abstract:Gallium nitride (GaN) powder have been successfully synthesized by ammoniating Ga2O3 under high temperature using ammonia as N source and Ga2O3 powder as Ga source. The produced powder structure, surface morphology were characterized by x-ray diffraction (XRD), scanning electron microscopy (SEM) and selected area electron diffraction (SAED) in this study. The results indicated that GaN particles in wurtzite structure were obtained at the Ga source temperature of 850 degreesC.
Crystal growth of hexagonal boron nitride (hBN) from Mg-B-N solvent system under high pressure

N. D. Zhigadlo

DOI: https://doi.org/10.1016/j.jcrysgro.2014.06.038

2014-07-09

Abstract:Transparent and colorless hexagonal boron nitride (hBN) single crystals were grown from the Mg-B-N system using high-pressure high-temperature cubic anvil technique. By varying the synthesis conditions we could determine the sequence of phase transformations occurring in the Mg-B-N system, construct the pressure-temperature (P-T) phase diagram and discuss the possible growth mechanism. The largest plate-like-shaped hBN crystals with sizes up to 2.5 mm in length and up to 10 (micro)m in thickness were grown at 30 kbar and 1900-2100 °C. The hBN crystals exhibited strong, narrow diffraction peaks typical of well-ordered stacking crystal planes, with the c-axis perpendicular to the crystal face. A characteristic Raman peak observed at 1367 cm-1 with a full width at half maximum of 8 cm-1 corresponds to the E2g vibration mode and indicates the high purity and order of hBN crystals grown by this method. From the practical point of view this work can stimulate further explorations of the Mg-B-N solvent system to obtain isotopically-enriched h10BN crystals, which can act as a key element in solid-state neutron detector devices.

Materials Science,Mesoscale and Nanoscale Physics
Structural Design and Physical Properties of Gallium Nitrides under High Pressures

Dandan Zhang,Lili Gao,Yuanye Tian,Songbo Zhang,Yonghui Du,Chunlei Kou,Miao Zhang,Feng Peng

DOI: https://doi.org/10.1021/acs.jpcc.2c01801

2022-01-01

Abstract:Polymeric nitrogen at high pressures has beenproven to be a promising candidate for the design and discovery ofhigh-energy-density materials as well as hard materials. Here, wereport predicted high-pressure structures and physical properties ofgallium nitrides using an effective unbiased structure searchingmethod combined withfirst-principles calculations. Severalunconventional stoichiometries of GaN2,GaN5,andGaN8compounds were predicted to be stable at a moderate pressure.The results reveal that GaN5with a N content of 83.3%, which isthermodynamically stable at 62.3 GPa by squeezing solid GaN andN2gas, is likely to be recovered as a metastable multifunctional material at ambient pressure. Given a computed energy density of similar to 3.85 kJ/g, a Vicker's hardness of similar to 30 GPa, and an indirect band gap of similar to 2.1 eV, GaN5is a potentially functional material withhigh-energy-density, hard, and photovoltaic properties. The present results open a new avenue to synthesize multifunctional polynitrogen compounds
Micro-Raman investigation of GaN nanowires prepared by direct reaction Ga with NH3

J Zhang,X.S Peng,X.F Wang,Y.W Wang,L.D Zhang

DOI: https://doi.org/10.1016/S0009-2614(01)00905-8

IF: 2.719

2001-01-01

Chemical Physics Letters

Abstract:Ordered crystalline GaN nanowires embedded in the nanochannels of anodic alumina membrane (AAM) were achieved by direct reaction Ga with NH3. The impact of reaction temperatures on Raman spectroscopic properties of GaN nanowires is investigated. X-ray diffraction and transmission electron microscopy (TEM) observations demonstrate that the crystalline GaN nanowires have hexagonal wurtzite structure. The hexagonal wurtzite structure GaN nanowires prepared at 960 °C are about 40 nm in diameter and up to several hundreds of micrometers in length.
Defect-pit-assisted Growth of GaN Nanostructures: Nanowires, Nanorods and Nanobelts

Shoubin Xue,Xing Zhang,Ru Huang,Huizhao Zhuang,Chengshan Xue

DOI: https://doi.org/10.1039/b804943b

IF: 4

2008-01-01

Dalton Transactions

Abstract:A new method using defect-pit-assisted growth technology to successfully synthesize the high-quality single crystalline GaN nanostructures by ammoniating Ga(2)O(3) films was proposed in this paper. During the ammoniating process, the amorphous middle buffer layer may unavoidably produce some defects and dislocations. Some defect pits come out, which have the lowest surface energy and can subsequently be used as a mask/template or act as potential nucleation sites to fabricate the GaN actinomorphic nanostructures. The as-prepared products are characterized by X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FTIR), scanning electron microscopy (SEM) and high-resolution transmission electron microscopy (HRTEM). The results indicate that all the reflections of the samples can be indexed to the hexagonal GaN phase and the clear lattice fringes in HRTEM further confirm the growth of high-quality single-crystal GaN nanostructures. The SEM images show that the nanostructures have been realized under different experimental conditions exhibiting different shapes: nanowires, nanorods, and nanobelts. No particles or other nanostructures are found in the SEM study, demonstrating that the product possesses pure nanostructures. These nanostructures show a very good emission peak at 366 nm, which will have a good advantage for applications in laser devices using one-dimensional structures. Finally, the growth mechanism is also briefly discussed.
A Study On Self-Assembled Gan Nanobelts By A New Method: Structure, Morphology, Composition, And Luminescence

Shoubin Xue,Xing Zhang,Ru Huang,Deheng Tian,Huizhao Zhuang,Chengshan Xue

DOI: https://doi.org/10.1021/cg800080b

IF: 4.01

2008-01-01

Crystal Growth & Design

Abstract:A new method using two-step growth technology to successfully synthesize high-quality single crystalline GaN nanobelts was employed in this paper. This growth method is applicable to continuous synthesis and able to produce a large number of single-crystalline GaN nanobelts with a relatively high purity and at a low cost. The results of X-ray diffraction (XRD) and selective area electron diffraction (SAED) patterns indicate that the reflections of the samples can be indexed to the hexagonal GaN phase with single crystal structure. From the scanned electron microscopy (SEM) morphology, we can see that the width of the nanobelts is about 800 nm, and the ratio of thickness to width is about 1/10. The maximum length is up to several tens of micrometers. No particles or other nanostructures are found in the SEM observation, demonstrating that the product possesses pure nanobelts. In the high-resolution transmission electron microscopy (HRTEM) image, the clear lattice fringes indicate the growth of high-quality single-crystal GaN nanobelts. X-ray photoelectron spectroscopy (XPS) confirms the formation of bonding between Ga and N, and yields the surface stoichiometry of Ga:N of about 1:1.03. The representative photoluminescence spectrum exhibits a strong emission peak at 369.3 nm and four weak emission peaks. Finally, the growth mechanism is also briefly discussed.
Two-step synthesis of one-dimensional single crystalline GaN nanowires

Li Yang,Xing Zhang,Ru Huang,Guoyan Zhang,Chengshan Xue

DOI: https://doi.org/10.1016/j.physe.2004.09.003

2005-01-01

Physica E: Low-Dimensional Systems and Nanostructures

Abstract:Straight and smooth GaN nanowires were synthesized on quartz substrates through the direct reaction of Ga2O3 thin films with flowing ammonia in a horizontal oven without using a template or catalyst. X-ray diffraction (XRD), scanning electron microscopy (SEM), energy-dispersive X-ray (EDX), transmission electron microscopy (TEM) and photoluminescence (PL) were used to characterize the samples. The straight and smooth cylindrical nanostructures are high quality single crystalline hexagonal wurtzite GaN nanowires with diameters ranging from 5 to 30nm and lengths up to 20μm. The near-band-edge emission peak located at 367nm was observed at room temperature.
Rapid Synthesis of High Purity Gan Powder

HQ Wu,J Hunting,FJ DiSalvo,MG Spencer

DOI: https://doi.org/10.1002/pssc.200461570

2005-01-01

Abstract:High purity, strong luminescent gallium nitride (GaN) powders were synthesized by direct reaction of gallium (Ga) and ammonia (NH3) using bismuth (Bi) as a catalyst in a vertical furnace. The reaction rate and yield from metal Ga were improved dramatically in the presence of Bi. In this simple apparatus, 25g Ga can be fully, stoichiometrically converted into GaN within 5 hours. The optimum temperature, NH3 flow rate and reaction time in this hot wall tube furnace were 1000 degrees C, 500 standard cubic centimetres per minute (seem) and 5 hours, respectively. X-ray diffraction demonstrates that the material has a high purity and a single crystalline structure. Electron microscopy was used to characterize the morphology of the powder particles. Powder purity was analyzed by utilizing Glow Discharge Mass Spectrometry (GDMS). Cathodoluminescence (CL) data showed strong luminescence from the powder. (c) 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Rapid Growth of Bulk Gan Crystal Using Gan Powder As Source Material

Wu Huaqiang,Spinelli Joseph,Konkapaka Phanikumar,Spencer Michael G.

DOI: https://doi.org/10.1557/proc-0892-ff30-01

2005-01-01

MRS Proceedings

Abstract:Using a novel gallium (Ga) vapor transport technique, thick gallium nitride (GaN) layers have been grown using GaN powder as the source material. In this technique, GaN powder decomposes at 1100 o C into gallium and nitrogen vapors. The Ga vapors are transported to the seed substrate and reacted with ammonia to form a crystalline GaN layer. The seed was composed of a sapphire substrate with a 2 μm Hydride Vapor Phase Epitaxy (HVPE) GaN layer on it. The growth temperature was set at 1180 o C. Using this technique, growth rates as high as 500 μm/hr were achieved. The grown GaN layers were single crystal and were characterized by X-ray diffraction and scanning electron microscopy.

ChemInform Abstract: GaN Crystals Prepared Through Solid‐State Metathesis Reaction from NaGaO2 and BN under High Pressure and High Temperature.

Amorphous GaN: Polyamorphism and crystallization at high pressure

Fabrication of Gan Nanodots Via Gan Thermal Decomposition in H-2 Atmosphere

A Benzene-Thermal Synthetic Route to Nanocrystalline GaN

Large-scale Synthesis of Single-Phase, High-Quality GaN Nanocrystallites

Crystallization Behavior of Amorphous Si2bc3n Ceramic Monolith Subjected to High Pressure

Formation of Cubic GaN Nanocrystals: A Study of the Thermal Stability of GaP Nanocrystals under Nitrogen

Low-temperature Synthesis and Characterization of GaN Nanocrystals from Gallium Trichloride Precursor

A Benzene-Thermal Metathesis Route to Pure Metastable Rocksalt GaN

Thermodynamic Calculations of the Fe–Ga–N Melting Diagram in the Context of Gallium Nitride Crystallization under High Temperatures and Pressures

Preparation of Gan Nanowires by Nonammonia Method and Their Photoelectronic Properties

Nitrogen-rich GaN5 and GaN6 As High Energy Density Materials with Modest Synthesis Condition

Synthesis of gallium nitride (GaN) powder by ammoniating Ga2O3 under high temperature

Crystal growth of hexagonal boron nitride (hBN) from Mg-B-N solvent system under high pressure

Structural Design and Physical Properties of Gallium Nitrides under High Pressures

Micro-Raman investigation of GaN nanowires prepared by direct reaction Ga with NH3

Defect-pit-assisted Growth of GaN Nanostructures: Nanowires, Nanorods and Nanobelts

A Study On Self-Assembled Gan Nanobelts By A New Method: Structure, Morphology, Composition, And Luminescence

Two-step synthesis of one-dimensional single crystalline GaN nanowires

Rapid Synthesis of High Purity Gan Powder

Rapid Growth of Bulk Gan Crystal Using Gan Powder As Source Material