Abstract:The problem of constructing the ternary Fe–Ga–N melting diagram under atmospheric and high (4 and 6 GPa) pressures was studied to find the thermodynamic stability region of gallium nitride (GaN), a wide-bandgap semiconductor material. Thermodynamic calculations were performed by using the models of phenomenological thermodynamics. The principal possibility of the synthesis of GaN crystals under high temperature and pressures with the use of iron as a dissolving alloy was proven. Some recommendations on the optimization of thermodynamic and kinetic parameters for the synthesis of GaN crystals by the temperature gradient method were given to improve their quality.

Thermodynamic Calculations of the Fe–Ga–N Melting Diagram in the Context of Gallium Nitride Crystallization under High Temperatures and Pressures