Abstract:The field of quantum computing is rapidly evolving, and Niobium Nitride (NbN) superconductors have emerged as a pivotal component in the field of quantum computing due to their unique properties. NbN possesses relatively higher superconducting transition temperature (T c = 15-17 K) as compared to traditional superconductors, making it a promising material for various applications, including superconductor quantum computers, single photon detectors, and hot electron bolometers [1]. The investigation of NbN's superconductivity has been a subject of extensive research over the past few decades. Given that the properties of NbN are intricately linked to its crystal structure, lattice constant, and nitrogen content, precise control of the structural and electrical characteristics of NbN films is essential for the realization of NbN based quantum devices. The (111) planes of δ-NbN exhibit relatively small lattice mismatches with group-III nitride semiconductors (~0.2% for AlN and ~2.7% for GaN) [2], suggesting the potential for integrating crystalline NbN superconductors with nitride semiconductors on a single wafer. Notably, N-polar AlGaN/GaN high electron mobility transistors have been successfully fabricated on NbN films, operating under Tc with a negative differential resistance [3], indicating that the integration of nitride semiconductors and superconductors can be harnessed to create Josephson junctions. To achieve high-quality all-nitride NbN/group-III nitride/NbN Josephson junctions, a comprehensive understanding of the NbN/GaN heterointerfaces is crucial. Despite limited reports on the epitaxial growth of NbN films on nitride semiconductors, little is known about the structural and transport properties of such NbN films. Previously, MBE growth of NbN films have been demonstrated on GaN substrate, showing superconducting critical temperatures exceeding 10 K [4]. In this presentation, our efforts on the development of single crystal NbN thin films on wide bandgap GaN substrate using cost efficient sputtering technique followed by a subsequent high-temperature annealing will be presented. Commercially available single-crystalline GaN (0001)/sapphire templates as well as differently oriented (c and a-planes) sapphire substrates are used as the substrates for the sputtered deposition of NbN films at 20 °C. After the deposition, a high temperature annealing was performed separately at 950 °C for 30 mins under Ar as well as N 2 atmosphere. While the as-deposited NbN film on GaN did not exhibit a discernible peak in the high-resolution XRD measurement, a high-intensity, single crystal (111)-oriented NbN film emerged prominently after annealing in both N 2 and Ar environments. This suggests a notable enhancement in the crystalline quality of the superconducting material attributable to the thermal annealing process. Although the crystallinity of the NbN layer improves post-annealing, there is an associated increase in grain size and surface roughness. Preliminary findings indicate a reduction in the critical temperature of the NbN film from 12.82 K to 8.69 K after high-temperature annealing, potentially linked to the incorporation of impurities and crystallographic defects during this process. Further investigations using atomic resolution transmission electron microscopy, secondary ion mass spectrometry and X-ray photoelectron spectroscopy will be performed to investigate the influence of annealing duration, temperature, and conditions on the critical temperature, impurity incorporation and defect formation in NbN films deposited with different thickness. In continuation of our recent exploration into depositing crystalline superconducting NbN films on III-nitride semiconductors, this presentation will also focus on our recent advancement of ultrawide bandgap semiconductor materials such as the growth of high-quality quality β-Ga 2 O 3 films and its ternary (Al x Ga 1-x ) 2 O 3 alloys, using metalorganic (MOCVD) and low-pressure (LPCVD) chemical vapor deposition growth techniques. Ga 2 O 3 and (Al x Ga 1-x ) 2 O 3 have emerged as a promising semiconductor material platform for applications in high-power electronics and ultraviolet optoelectronics due to their excellent chemical and thermal stability, as well as high breakdown field strengths. The structural and electrical characteristics of Si-doped β-Ga 2 O 3 and (Al x Ga 1-x ) 2 O 3 thin films will be presented. Additionally, we will present recent findings on achieving phase-pure β-(Al x Ga 1-x ) 2 O 3 films with a record-high Al composition (< 99%) [5]. Our research efforts into understanding the orientation-dependent Al incorporation in β-(Al x Ga 1-x ) 2 O 3 thin films and the determination of band offsets at β-(Al x Ga 1-x ) 2 O 3 /β-Ga 2 O 3 heterostructures will be presented. Furthermore, the presentation will touch upon the heteroepitaxial development of other phases of Ga 2 O 3 and (Al x Ga 1-x ) 2 O 3 , including α, γ, and κ. Acknowledgment : Dr. Bhuiyan acknowledges the support and guidance of his PhD advisor- Dr. Hongping Zhao at The Ohio State University for the MOCVD growth and characterization of β-Ga 2 O 3 and (Al x Ga 1-x ) 2 O 3 films conducted in Zhao's group. Reference : Yamashita et al., Phys. Rev. Appl. 8, 054028 (2017). Kobayashi et al., Appl. Phys. Express 13, 061006 (2020). Yan et al., Nature 555, 183 (2018). G. Wright et al., APL Mater. 10, 051103 (2022). Bhuiyan et. al, Phys. Status Solidi RRL 17, 2300224 (2023). Figure 1

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