Abstract:The group-Ⅲ nitrides and their related ternary alloys have been becoming the most attractive material for light emitting diodes (LEDs) and laser diodes (LDs) in the UV and blue spectral range. However, the origins of the yellow luminescence (YL), which is commonly observed in almost undoped and n-type GaN, remain unclear. The nature and the role of initial nitridation of sapphire surface and the generation of threading dislocation (TD) are ambiguous too. It is a possible way to resolve the above problems by studying the microstructures and optical properties combining the growth conditions. In this work, two kinds of GaN films were grown by MOCVD under different initial nitridation time (180 seconds for Sample A, and 90s for Sample B). The growth temperature is about 950℃. The cross-sectional transmission electron microscope (TEM) is performed near the GaN/sapphire interface. Corresponding the growth processes, there are three zones in the GaN layer: buffer layer, zone and sound zone. There are haystack-like domains in the faulted zone, in which there are high density of extended defects. The thickness of the faulted zone is about 0.4μm. Just above this region, the defects density is reduced sharply, and the quality of the layer is improved, which is identified by electron diffraction (ED) patterns. In comparison, Sample A shows about an order lower density of extended defects than Sample B, their columnar diameter is larger and its ED pattern is sharper, too. The buffer layer of Sample B is more smooth than Sample A. The appropriate rougher morphology of the buffer layer may cause that the structural disorder between the high-temperature (HT) grown island and the buffer layer is accommodated by Frank and Shockley partial dislocations. However, the TD is likely to propagate into the HT GaN from the smooth surface of the buffer layer grown after extensively nitridation of substrate. According to the position and width of X-ray diffraction peaks of (0002) and (0004), the size of crystalline grain, D and the residual strain could be calculated. The values of(D,e in)of Sample A and B are (175nm,0.167%) and (90nm,0.141%), respectively. Small size of crystalline grain may be advantageous to relieve the lattice and thermal mismatch stress, but it lead to higher density of extended defects. The width of GaN (0002) reflections of Sample A is 4min lower than that of Sample B. This result may be due to the lower screw TD. The higher density of screw TD may widen the GaN (0002) peak in X-ray rocking curve. In room temperature PL spectra, the ratio of band-edge emission intensity to YL one of Sample A is 3 orders larger than that of Sample B. Furthermore the YL in Sample B is stronger and has fine structure, while that in Sample A is nearly invisible in the PL spectrum. The GaN epilayer with high quality exhibits almost no YL emission. It is well known that the YL corresponds to the deformed crystal structure. We assigned that the screw TD and mixed TD are attributed to the YL referring to our XRD results.

Analysis and simulation of the in-situ time-resolved reflectivity recorded during the growth of GaN on GaAs (110) substrate

Analysis of incubation time preceding the Ga-assisted nucleation and growth of GaAs nanowires on Si(111)

Temperature Field, Flow Field, and Temporal Fluctuations Thereof in Ammonothermal Growth of Bulk GaN-Transition from Dissolution Stage to Growth Stage Conditions

Growth Mechanisms of GaN/GaAs Nanostructures by Droplet Epitaxy Explained by Complementary Experiments and Simulations

Defects in GaN Films Studied by Positron Annihilation Spectroscopy

Model for Low-Temperature Growth of Gallium Nitride

Molecular dynamics simulations and experimental studies on low-temperature growth of GaN

X-ray Diffraction, Photoluminescence and Secondary Ion Mass Spectroscopy Study of GaN Films Grown on Si(111) Substrate by Vacuum Reactive Evaporation

Gallium adsorption on (0001) GaN surfaces

Growth of AlGaN under the conditions of significant gallium evaporation: phase separation and enhanced lateral growth

Miscut dependent surface evolution in the process of N-polar GaN$(000\bar 1)$ growth under N-rich condition

Self-regulated radius of spontaneously formed GaN nanowires in molecular beam epitaxy

Molecular beam epitaxy of GaN/AlGaN quantum wells on bulk GaN substrate in the step-flow or step meandering regime: influence on indirect exciton diffusion

Crystallization behavior and defect analysis on induction growth of hexagonal GaN in isothermal relaxation

Epitaxy growth kinetics of GaN films

Microstructural and Optical Properties of GaN Films on Nitrided Sapphire Substrates

Growth Rate and Surface Morphology as A Function of Growth Parameter for GaN MOCVD

In situ GaN decomposition analysis by quadrupole mass spectrometry and reflection high-energy electron diffraction

In situ investigation of growth modes during plasma-assisted molecular beam epitaxy of (0001)GaN

Intrinsic limits governing MBE growth of Ga-assisted GaAs nanowires on Si(111)