Gallium adsorption on (0001) GaN surfaces

C. Adelmann,J. Brault,G. Mula,B. Daudin,L. Lymperakis,J. Neugebauer

DOI: https://doi.org/10.1103/PhysRevB.67.165419

2003-04-07

Abstract:We study the adsorption behavior of Ga on (0001) GaN surfaces combining experimental specular reflection high-energy electron diffraction with theoretical investigations in the framework of a kinetic model for adsorption and ab initio calculations of energy parameters. The measurement of a Ga/GaN adsorption isotherm allows the quantification of the equilibrium Ga surface coverage as a function of the impinging Ga flux. The temperature dependence is discussed within an {\em ab initio} based growth model for adsorption taking into account the nucleation of Ga clusters.

Materials Science

What problem does this paper attempt to address?

The problem that this paper attempts to solve is related to the understanding of the gallium (Ga) adsorption behavior on the (0001) surface of gallium nitride (GaN), especially the equilibrium coverage of gallium and its structural characteristics under different gallium fluxes and substrate temperature conditions during the molecular beam epitaxy (MBE) growth process. Specifically, the research aims to:

1. **Understand the gallium adsorption behavior**: By combining experiments (such as high - energy electron diffraction RHEED) and theoretical calculations (such as based on kinetic models and ab - initio energy parameters), study the adsorption behavior of gallium on the GaN (0001) surface under different gallium fluxes and substrate temperatures.

2. **Quantify the adsorption isotherm**: Measure and quantify the adsorption isotherm of gallium on the GaN (0001) surface to determine the equilibrium adsorption coverage under different gallium fluxes and explain the relationship between these coverages and fluxes.

3. **Determine the adsorption structure**: Explore the adsorption structure under specific conditions, especially when the gallium coverage reaches 2.5±0.2 monolayers, and verify whether it conforms to the laterally contracted bilayer model.

4. **Explain the phase diagram and transition mechanism**: Construct the gallium adsorption phase diagram, explain the transition mechanism between different adsorption regions, and discuss the relationship between these transitions and temperature.

5. **Resolve contradictions in previous studies**: Explain the problem of inconsistent critical gallium fluxes in the description of activation energy in previous studies, especially why different studies have given different activation energies (for example, 2.8 eV and 4.8 eV). Explain these contradictory results by proposing a growth model based on first - principles.

### Formula summary

- **Desorption rate formula**:
\[
\Phi_{\text{des}}(c)=\frac{dc}{dt}
\]
where \(c\) is the surface coverage of gallium and \(t\) is time.

- **Equilibrium coverage formula**:
\[
c_{\text{eq}}(\Phi)=\int_{0}^{\Phi}\Phi'\frac{\partial t_{\text{des}}}{\partial\Phi'}d\Phi'
\]
where \(t_{\text{des}}\) is the desorption time and \(\Phi\) is the gallium flux.

- **Critical flux formula**:
\[
\Phi_{\text{crit}} = v+\nu_{\text{des}}e^{-(E_{\text{des}}+\Delta E_{\text{nuc}})/k_BT}
\]
where \(v\) is the growth rate, \(\nu_{\text{des}}\) is the desorption frequency, \(E_{\text{des}}\) is the desorption barrier, \(\Delta E_{\text{nuc}}\) is the nucleation energy, \(k_B\) is the Boltzmann constant, and \(T\) is the temperature.

Through these studies, the authors hope to provide theoretical support for optimizing the MBE growth conditions of GaN and explain some contradictory results in previous studies.