Abstract:A range of high quality Ga1-xMnxN layers have been grown by molecular beam epitaxy with manganese concentration 0.2 < x < 10%, having the x value tuned by changing the growth temperature (Tg) between 700 and 590 °C, respectively. We present a systematic structural and microstructure characterization by atomic force microscopy, secondary ion mass spectrometry, transmission electron microscopy, powder-like and high resolution X-ray diffraction, which do not reveal any crystallographic phase separation, clusters or nanocrystals, even at the lowest Tg. Our synchrotron based X-ray absorption near-edge spectroscopy supported by density functional theory modelling and superconducting quantum interference device magnetometry results point to the predominantly +3 configuration of Mn in GaN and thus the ferromagnetic phase has been observed in layers with x > 5% at 3 < T < 10 K. The main detrimental effect of Tg reduced to 590 °C is formation of flat hillocks, which increase the surface root-mean-square roughness, but only to mere 3.3 nm. Fine substrates surface temperature mapping has shown that the magnitudes of both x and Curie temperature (Tc) correlate with local Tg. It has been found that a typical 10 °C variation of Tg across 1 inch substrate can lead to 40% dispersion of Tc. The established here strong sensitivity of Tc on Tg turns magnetic measurements into a very efficient tool providing additional information on local Tg, an indispensable piece of information for growth mastering of ternary compounds in which metal species differ in almost every aspect of their growth related parameters determining the kinetics of the growth. We also show that the precise determination of Tc by two different methods, each sensitive to different moments of Tc distribution, may serve as a tool for quantification of spin homogeneity within the material.

Temperature dependence of liquid-gallium ordering on the surface of epitaxially grown GaN

Real-time observation of liquid-gallium ordering on epitaxially-grown GaN(0001) by X-ray scattering measurements

Temperature dependence of strain in A1(X)Ga(1-X)N/GaN heterostructures

Growth temperature dependence of structural properties for single crystalline GaN films on MgAl<sub>2</sub>O<sub>4</sub> substrates by pulsed laser deposition

Temperature-dependent Structure Evolution in Liquid Gallium

Temperature Effect of van der Waals Epitaxial GaN Films on Pulse-Laser-Deposited 2D MoS2 Layer

Temperature Dependence of Raman Scattering in Single Crystal GaN Films

Gallium adsorption on (0001) GaN surfaces

Island dynamics and anisotropy during vapor phase epitaxy of m-plane GaN

Liquid phase epitaxy of GaN films on sapphire substrates under an atmospheric pressure nitrogen ambience

Structural Properties of GaN(0001) Epitaxial Layers Revealed by High Resolution X-ray Diffraction

A Low-Temperature Aln Interlayer to Improve the Quality of Gan Epitaxial Films Grown on Si Substrates

Molecular dynamics simulations and experimental studies on low-temperature growth of GaN

Temperature Field, Flow Field, and Temporal Fluctuations Thereof in Ammonothermal Growth of Bulk GaN-Transition from Dissolution Stage to Growth Stage Conditions

Effect of growth temperature on the properties of GaN epitaxial films grown on magnesium aluminate scandium oxide substrates by pulsed laser deposition

Low-temperature and Global Epitaxy of GaN on Amorphous Glass Substrates by Molecular Beam Epitaxy Via a Compound Buffer Layer

Microscopic Study of Submonolayer Nucleation Characteristics During GaN (0001) Homoepitaxial Growth

Impact of substrate temperature on magnetic properties of plasma-assisted molecular beam epitaxy grown (Ga,Mn)N

Plasma Assisted Molecular Beam Epitaxial Growth of GaN with Low Growth Rates and Their Properties

Effects of Growth Temperature Modulated by HCl Flow Rate on the Surface and Crystal Qualities of Thick GaN by HVPE

Gan Layers on Si (111) from Nanocolumns to Nanorods by Plasma-Assisted Molecular Beam Epitaxy