Abstract:The liquid-phase epitaxial growth (LPE) of GaN crystals on the MOCVD-GaN substrate using the Na-flux method was investigated under various growth times, 30, 60, 100, and 150 h. The morphology properties of as-grown GaN crystals were characterized by the scanning electron microscope (SEM). The variation of nitrogen concentration and supersaturation of GaN in the Ga-Na melt as a function of time is given computationally during the growth time of 150 h, as well as the distribution of nitrogen concentration for 30, 60, 100, and 150 h. In the early term of LPE growth (Stage I), the growth proceeds in a near-equilibrium laminar pattern at lower growth driving forces, corresponding to a screw dislocation growth mechanism. As the growth time extends, the GaN supersaturation in the Ga-Na melt increases with mass transfer continuing, leading to the mechanism of LPE growth changing from screw dislocation growth to continuous hexagonal pyramidal growth with deeper and deeper pit depths, and also thereby leading to the emergence of Stage II. A high level of GaN supersaturation in the solution could promote the growth along the vertical direction of Stage II but is detrimental to the layer growth of Stage I. Broadening the growth of Stage I could realize near-equilibrium growth of GaN crystals and improve the crystalline quality of epitaxial GaN crystals. The specific mechanisms of the different stages of GaN crystal growth were not clarified in the previous work. Through a combination of experimental and simulation calculations, the GaN crystal growth mechanism was discussed. Based on the growth mechanism acquired, the growth process may be effectively regulated to obtain high-quality GaN single crystals.

Real-time observation of liquid-gallium ordering on epitaxially-grown GaN(0001) by X-ray scattering measurements

Temperature dependence of liquid-gallium ordering on the surface of epitaxially grown GaN

Structural Properties of GaN(0001) Epitaxial Layers Revealed by High Resolution X-ray Diffraction

Thickness Measurement of GaN Films by X-ray Diffraction

Quantitative analysis of lattice plane microstructure in the growth direction of a modified Na-flux GaN crystal using nanobeam X-ray diffraction

Role of threading dislocation structure on the x‐ray diffraction peak widths in epitaxial GaN films

Structural Characterization of GaN Single Crystal Layers Grown by Vapor Transport from a Gallium Oxide (ga 2 O 3 ) Powder Source

High-resolution X-Ray Diffraction Studies of Highly Curved GaN Layers Prepared by Hydride Vapor Phase Epitaxy

Method for measurement of lattice parameter of cubic GaN layers on GaAs (001)

Structural and optical characterization of GaN films grown by metalorganic chemical vapor deposition

Investigation of Epitaxial GaN Films by Conductive Atomic Force Microscopy

Rutherford backscattering and channeling study of heteroepitaxial GaN and its ternary alloy

X-ray diffraction reciprocal space and pole figure characterization of cubic GaN epitaxial layers grown on (0 0 1) GaAs by molecular beam epitaxy

Determination of the tilt and twist angles of curved GaN layers by high-resolution x-ray diffraction

Structural and Optical Investigation of GaN Grown by Metal-Organic Chemical Vapor Deposition

Decomposition of the anisotropic strain in 3D-structure GaN layers using Raman spectroscopy

X-ray scattering study of GaN nanowires grown on Ti/Al$_{2}$O$_{3}$ by molecular beam epitaxy

X-ray Characterization of Composition and Relaxation of AlxGa1−xN(≤x≤1) Layers Grown on GaN/sapphire Templates by Low Pressure Organometallic Vapor Phase Epitaxy

Microstructure and Physical Properties of GaN Films on Sapphire Substrates

Transmission Electron Microscopy Study of the Microstructure of a GaN Film Grown on Sapphire by Organometallic Vapor Phase Expitaxy

Analysis of GaN Crystal Growth Mechanism in Liquid-Phase Epitaxial Na-flux Method