Abstract:GaN on Si plays an important role in the integration and promotion of GaN-based wide-gap materials with Si-based integrated circuits (IC) technology. A series of GaN film materials were grown on Si (111) substrate using a unique plasma assistant molecular beam epitaxy (PA-MBE) technology and investigated using multiple characterization techniques of Nomarski microscopy (NM), high-resolution X-ray diffraction (HR-XRD), variable angular spectroscopic ellipsometry (VASE), Raman scattering, photoluminescence (PL), and synchrotron radiation (SR) near-edge X-ray absorption fine structure (NEXAFS) spectroscopy. NM confirmed crack-free wurtzite (w-) GaN thin films in a large range of 180–1500 nm. XRD identified the w- single crystalline structure for these GaN films with the orientation along the c-axis in the normal growth direction. An optimized 700 °C growth temperature, plus other corresponding parameters, was obtained for the PA-MBE growth of GaN on Si, exhibiting strong PL emission, narrow/strong Raman phonon modes, XRD w-GaN peaks, and high crystalline perfection. VASE studies identified this set of MBE-grown GaN/Si as having very low Urbach energy of about 18 meV. UV (325 nm)-excited Raman spectra of GaN/Si samples exhibited the GaN E2(low) and E2(high) phonon modes clearly without Raman features from the Si substrate, overcoming the difficulties from visible (532 nm) Raman measurements with strong Si Raman features overwhelming the GaN signals. The combined UV excitation Raman–PL spectra revealed multiple LO phonons spread over the GaN fundamental band edge emission PL band due to the outgoing resonance effect. Calculation of the UV Raman spectra determined the carrier concentrations with excellent values. Angular-dependent NEXAFS on Ga K-edge revealed the significant anisotropy of the conduction band of w-GaN and identified the NEXAFS resonances corresponding to different final states in the hexagonal GaN films on Si. Comparative GaN material properties are investigated in depth.

Quantitative analysis of lattice plane microstructure in the growth direction of a modified Na-flux GaN crystal using nanobeam X-ray diffraction

Microstructure and Strain Analysis of GaN Epitaxial Films Using In-Plane Grazing Incidence X-Ray Diffraction

Surface morphology smoothing of a 2 inch-diameter GaN homoepitaxial layer observed by X-ray diffraction topography

Growth behavior of GaN film along non-polar [11–20] directions

Analysis of GaN Crystal Growth Mechanism in Liquid-Phase Epitaxial Na-flux Method

Detailed surface analysis of V-defects in GaN films on patterned silicon(111) substrates by metal–organic chemical vapour deposition

Real-time observation of liquid-gallium ordering on epitaxially-grown GaN(0001) by X-ray scattering measurements

X-ray Characterization of GaN Single Crystal Layers Grown by the Ammonothermal Technique on HVPE GaN Seeds and by the Sublimation Technique on Sapphire Seeds

X‐Ray Diffraction Microstrain Analysis for Extraction of Threading Dislocation Density of GaN Films Grown on Silicon, Sapphire, and SiC Substrates

Growth and Characterization of GaAsN Bulk Layer and (in)gaasn Quantum-Well Structures

Optical, Structural, and Synchrotron X-ray Absorption Studies for GaN Thin Films Grown on Si by Molecular Beam Epitaxy

GaN Single Crystals: Growth Mechanism and Temperature-Modulated Growth Using Li3N Flux

Growth Behavior and Stress Distribution of Bulk GaN Grown by Na-flux with HVPE GaN Seed under Near-Thermodynamic Equilibrium

Atomic‐Scale Investigation of the Lattice‐Asymmetry‐Driven Anisotropic Sublimation in GaN

Morphology and Characterization of GaN Crystals Grown by Na Flux Method under 7 MPa Nitrogen Pressure

Defect-pit-assisted Growth of GaN Nanostructures: Nanowires, Nanorods and Nanobelts

A Study on the Growth Process for Liquid Phase Epitaxy of GaN Crystal Using Na–Li–Ca Flux

Structural Characterization of GaN Single Crystal Layers Grown by Vapor Transport from a Gallium Oxide (ga 2 O 3 ) Powder Source

Structural Properties of GaN(0001) Epitaxial Layers Revealed by High Resolution X-ray Diffraction

The Effect of Lateral Growth of Self-Assembled GaN Microdisks on UV Lasing Action

Growth of Single-Crystalline GaN Films on Ga-Free Langasite-Type Crystals by Metal-Organic Chemical Vapor Deposition