X studies on local structures of nanocrystalline and crystalline GaN

Xinyi Zhang,Zhongrui Li,Wensheng Yan,Xiaoguang Wang,Shiqiang Wei,Kunquan Lu

2001-01-01

Abstract:X-ray absorption fine structure (XAFS) was used to investigate the local structures around Ga atoms in the hexagonal nanocrystalline and crystalline GaN under 78 K and 300 K. For the first nearest-neighbor coordination of Ga-N, the average bond length R, coordination N, thermal disorder σT and structural disorder σs of nanocrystalline GaN are similar to those of crystalline GaN, which are 0.194 nm, 4.0, 0.0052 nm and 0.0007 nm, respectively. When the temperature is elevated from 78 K to 300 K, the σT in GaN samples increases by lower than 0.0005 nm. It indicates that the Ga-N covalent bond is much stronger, and is nearly independent of temperature and crystalline state. For the second nearest-neighbor Ga-Ga coordination, the R values of the samples are about 0.318 nm; the σs (0.0057 nm) of nanocrystalline GaN is 0.0047 nm larger than that of crystalline GaN(O.001 nm); the σT of Ga-Ga coordination in nanocrystalline GaN are 0.0053 nm, 0.0085 nm for the temperature of 78 K and 300 K, respectively. This shows that the σT of Ga-Ga coordination is greatly affected by the temperature. The major difference of local structure around Ga atoms between nanocrystalline GaN and crystalline GaN is shown by the relatively large σs of the Ga-Ga second nearest-neighbor shell in nanocrystalline GaN. The reason may be explained by that there exist larger defects and unsaturated surface atoms in nanocrystalline GaN.