Local Structures of GaAs Semiconductor in High Shells Studied by MultipleScattering Extended Xray Absorption Fine Structure

Zhihu Sun,Shiqiang Wei
DOI: https://doi.org/10.1238/physica.topical.115a00249
2005-01-01
Physica Scripta
Abstract:Multiple-scattering extended x-ray absorption fine structure (MS-EXAFS) was used to investigate the local structures around Ga atoms from the first to third coordination shells for GaAs crystals. The results revealed that among all the 7 multiple scattering paths in the first three coordination shells of Ga atoms, the dominant one is the scattering pathway of Ga0 → As1 → Ga2 → Ga0 (DS2). The DS2 path is almost out of phase with the single scattering path (SS2) of the second shell, and destructively interferes with the SS2 path. The amplitude ratio of DS2 to SS2 is about 25%. We provide a simple and feasible MS-EXAFS analysis method for investigating the local structure of the first three shells of III-V semiconductors with the zinc-blende structure.
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