Abstract:We have conducted As and Ga Nuclear Magnetic Resonance (NMR) experiments to investigate order/disorder in AlxGa1 xAs lift-off films with x B 0.297 and 0.489. We were able to identify all possible As(AlnGa4 n) sites with n = 0–4 coordinations in As NMR spectra using spin-echo experiments at 18.8 Tesla. This was achieved by employing high rf field strengths using a small solenoid coil and an NMR probe specifically designed for this purpose. Spectral deconvolution, using an evolutionary algorithm, complies with the absence of long-range order if a CuAu based order parameter is imposed. An unconstrained fit shows a deviation of the statistics imposed by this type of ordering. The occupational disorder in the Ga and Al positions is reflected in a distribution of the Electric Field Gradients (EFGs) experienced at the different arsenic sites. We established that this can be modelled by summing the effects of the first coordination sphere and a Czjzek type distribution resulting from the compositional variation in the Al/Ga sub-lattice in the higher coordination spheres. Ga 3QMAS and nutation data exclude the presence of highly symmetric sites and also show a distribution in EFG. The experimentally obtained quadrupolar interactions are in good agreement with calculations based on Density Functional Theory (DFT). Using additivity of EFG tensors arising from distant charge perturbations, we could use DFT to model the EFG distributions of the n = 0–4 sites, reproducing the Czjzek and extended Czjzek distributions that were found experimentally. On the basis of these calculations we conclude that the As quadrupolar interaction is sensitive to compositional modulations up to the 7th coordination shell in these systems.

ORDERED STRUCTURES AND ELECTRONIC PROPERTIES OF (Gaas)1-Xge2x SYSTEM

Structural and Thermodynamic Properties of Gallium Arsenide with Hexagonal Wurtzite Structure from First-Principles Analysis

Structure of the Alloy (Gaas)1−xge2

First-principle Calculations of the Structure and Elastic Properties of GaAs under Pressure

The Effects of Ordering in Ternary Semiconductor Alloys: Electronic and Structural Properties

Correlations and Ordering in (gasb)1−xge2x Alloys

First Principles Study on the Structural Stability and Optoelectronic Properties of InxGa1−xAs Materials with Different Indium Component

Chemical order in Ge-Ga-Sb-Se glasses

First-principles study of structural stability and electronic properties of Sb/GaSb(111) semimetal–semiconductor superlattice

A solid-state NMR and DFT study of compositional modulations in Al x Ga

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Effects of ordering on the band structure of III–V semiconductors

Metastable order-disorder phase transition of the alloys (GaSb)1-XGe2x, (InP)1-xGe2x and effects on energy gaps

Structural Ability and Electronic Density of States in (001)- and (111)-Oriented (Gap)1/(inp)1strained-Layer Superlattices

Order Alloy in Ge X Si 1- X /si(100) Strained-Layer Superlattices

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Compositional effects on structural, electronic, elastic, piezoelectric and dielectric properties of GaInN alloys: a first-principles study

Systematic study of Ga$_{1-x}$In$_x$As self-assembled quantum wires with different interfacial strain relaxation

Competing Structures in (In,Ga)Se and (In,Ga)2Se3 Semiconductors

Electric Field Effect of Gaas Monolayer from First Principles

Two-Dimensional Si-Ge Monolayers: Stabilities, Structures and Electronic Properties