Abstract:Chalcogenide alloys in pseudobinary line between Sb2Te3 and GeTe are extensively utilied in phase change memories for optical and electronic contrast between crystalline and amorphous phases. Different from the crystalline structure, the understanding of amorphous structures is still insufficient due to disorder and distortion. By employing first-principle molecular dynamics simulations and atomistic cluster alignment analysis, the short-range orders and the associated distortions of amorphous Sb2Te3, Ge1Sb2Te4, Ge2Sb2Te5, Ge3Sb2Te6 and GeTe are investigated to explore the origin of nature difference. The results reveal that GeGe and SbSb bonds present a notable competitive mechanism with GeTe content. The GeTe content has a great influence on Ge- and Te-centered short-range orders but little influence on the structures of Sb-centered clusters, especially for the octahedral sites and unidentified structures. The tetrahedrons in Ge-centered clusters of each alloy show a close proportion, but the fraction of tetrahedrons in total clusters increases with the increasing GeTe content due to the increase in the ratio of Ge atom. As for the distortions of clusters, the distorted tetrahedrons in Ge2Sb2Te5 are closest to the standard tetrahedron, the Peierls distortion of Ge-centered 6-fold octahedron reduces with an increase in GeTe content whereas that of Sb-centered 6-fold octahedron shows a little change. Additionally, it is found that GeTe content can inhibit the formation of nanocavity but contribute to the formation of the odd rings. Our findings deepens the understanding of amorphous structures, which can promote the design and application of phase-change materials.

Structure of the Alloy (Gaas)1−xge2

Metastable order-disorder phase transition of the alloys (GaSb)1-XGe2x, (InP)1-xGe2x and effects on energy gaps

The Metastable Phase Transition of the Alloy (gaas)1−xsi2x and Its Electronic Properties

Electronic structure of Ge/SixSnyGe1−x−y quantum dots

Structural and Thermodynamic Properties of Gallium Arsenide with Hexagonal Wurtzite Structure from First-Principles Analysis

ORDERED STRUCTURES AND ELECTRONIC PROPERTIES OF (Gaas)1-Xge2x SYSTEM

Correlations and Ordering in (gasb)1−xge2x Alloys

First-principles Calculations of Band-Gap Properties of Zinc-Blende B X Ga 1-X N and B X Ga 1-X N Y As 1-Y Alloys

Ab Initio Calculation Of The Structure Of The Random Alloys Snxge1-X

Structure of amorphous Cu$_2$GeTe$_3$ and a model for its fast phase-change mechanism

Effective Electronic Structure of Monoclinic $β-(Al_xGa_{1-x})_2O_3$ alloy semiconductor

Electronic structure evolution in dilute carbide Ge$_{1-x}$C$_{x}$ alloys and implications for device applications

Order Alloy in Ge X Si 1- X /si(100) Strained-Layer Superlattices

Band-Structure Anomalies of the Chalcopyrite Semiconductors Cugax2 Versus Aggax2 (X=S and Se) and Their Alloys

Origin of the Unusually Large Band-Gap Bowing and the Breakdown of the Band-Edge Distribution Rule in the Snxge1-X Alloys

Optical properties and band lineup in GaNxAs1-x/GaAs single quantum wells

A first-principle study on the band structure of GePb alloys

The local structural differences in amorphous Ge-Sb-Te alloys

Theory of band gap bowing of disordered substitutional II-VI and III-V semiconductor alloys

Band Offset of Gaas/Alxga1-Xas Heterojunctions from Atomistic First Principles

Effective Band Structure and Crack Formation Analysis in Pseudomorphic Epitaxial Growth of (In x Ga 1- x ) 2 O 3 Alloys: A First-Principles Study