Ashis Kundu,Fabian Otte,Jesús Carrete,Paul Erhart,Wu Li,Natalio Mingo,Georg K. H. Madsen
Abstract:Using a first-principles approach, we analyze the impact of \textit{DX} centers formed by S, Se, and Te dopant atoms on the thermal conductivity of GaAs. Our results are in good agreement with experiments and unveil the physics behind the drastically different effect of each kind of defect. We establish a causal chain linking the electronic structure of the dopants to the thermal conductivity of the bulk solid, a macroscopic transport coefficient. Specifically, the presence of lone pairs leads to the formation of structurally asymmetric \textit{DX} centers that cause resonant scattering of incident phonons. The effect of such resonances is magnified when they affect the part of the spectrum most relevant for thermal transport. We show that these resonances are associated with localized vibrational modes in the perturbed phonon spectrum. Finally, we illustrate the connection between flat adjacent minima in the energy landscape and resonant phonon scattering through detailed analyses of the energy landscape of the defective structures.
What problem does this paper attempt to address?
The problem that this paper attempts to solve is to understand the influence of doping on the thermal conductivity of gallium arsenide (GaAs), especially how different types of defects (such as DX centers) significantly reduce its thermal conductivity. Specifically, the author analyzed the influence of DX centers formed by S, Se and Te atoms on the thermal conductivity of GaAs through first - principles calculations, and revealed the physical mechanisms by which each defect leads to significantly different thermal conductivities.
### Main problems:
1. **Influence of doping on thermal conductivity**: Why is the thermal conductivity of S - doped GaAs samples much lower than that of Se - and Te - doped samples at low temperatures?
2. **Role of DX centers**: How are DX centers formed? How does their existence affect the thermal conductivity of GaAs?
3. **Resonant scattering mechanism**: Why do certain types of DX centers cause strong phonon resonant scattering, thereby significantly reducing the thermal conductivity?
### Research background:
- GaAs is an important III - V semiconductor material, widely used in electronic and optoelectronic devices.
- Doping can control the carrier concentration, but it may also introduce unwanted behaviors, such as scattering or trapping electrons or holes, limiting the carrier concentration and mobility.
- Defects have a significant impact on heat transfer, especially through phonon - dominated heat transfer processes.
- S, Se and Te are doped into GaAs as group VI elements to form so - called DX centers, which contain an unknown lattice distortion X as an acceptor.
### Key findings:
- Through ELF (electron localization function) analysis, the author revealed the important role of lone - pair electrons in the formation of DX centers.
- Different types of DX centers (such as BB - DX, α - CCB - DX and β - CCB - DX) will cause different degrees of reduction in thermal conductivity, mainly due to the structural distortions and local vibration modes they cause.
- At low temperatures, certain types of DX centers (such as α - CCB - DX) will cause strong phonon resonant scattering within a specific frequency range, resulting in a significant decrease in thermal conductivity.
### Conclusions:
- Through detailed calculations and analyses, the author explained the reasons for the differences in thermal conductivity among different doped GaAs samples observed in experiments.
- These findings are helpful for understanding the influence of defects on the heat transfer properties of semiconductor materials and provide a theoretical basis for designing advanced semiconductor materials with specific thermal conductivity characteristics.
### Formula summary:
1. **Lattice thermal conductivity tensor**:
\[
\kappa_{\alpha\beta}^{\text{l}}=\frac{1}{k_BT^2V}\sum_{jq}n_0(n_0 + 1)(\hbar\omega_{jq})^2v_{jq}^\alpha v_{jq}^\beta\tau_{jq}
\]
where \(V\) is the unit cell volume, \(k_B\) is the Boltzmann constant, \(T\) is the temperature, \(n_0\) is the Bose - Einstein occupation number, and \(\omega\) and \(v\) are the angular frequency and group velocity respectively.
2. **Total phonon scattering rate**:
\[
\frac{1}{\tau_{jq}}=\frac{1}{\tau_{\text{anh}, jq}}+\frac{1}{\tau_{\text{iso}, jq}}+\frac{1}{\tau_{\text{def}, jq}}
\]
where \(\tau_{\text{anh}, jq}\), \(\tau_{\text{iso}, jq}\) and \(\tau_{\text{def}, jq}\) are the scattering rates caused by crystal intrinsic anharmonicity, isotope mass and defects respectively.
3. **Defect - induced phonon scattering rate**:
\[
\frac{1}{\tau_{\text{def}, jq}}=-\rho_{\text{def}}V\frac{1}{\omega_{jq}}\Im\left\langle jq\middle|T\middle|jq\right\rangle
\]