Abstract:Ternary layered single crystals of HfGeTe4 have been synthesized and systematically investigated to study their electronic and vibrational properties using angle-resolved photoemission spectroscopy and Raman scattering (RS) spectroscopy. The experimental results were supported through density functional theory by calculating the electronic band structures, phonons dispersion, lattice thermal conductivity (κL), and phonon lifetimes. The measured Fermi surfaces represent integrated intensities at different binding energies along the opposite symmetry directions, revealing the anisotropic Fermi surfaces. Their band structure shows different band curvatures in the high symmetry direction with anisotropic band dispersions. Moreover, the change in magnetoresistance under different orientations reveals anisotropic electrical conductivity, which further supports our results of 2D anisotropic crystals. HfGeTe4 shows a strong in-plane anisotropic response under polarized RS with phonon intensities changing with the rotation angle, manifesting twofold and fourfold symmetry orientations. Furthermore, the Raman scattering spectra show phonon softening observed with increasing temperature, which could be attributed to the phonon anharmonicity estimated from both the frequency shift and linewidth. The results were further supported by lattice-dynamics calculations. We have found very low lattice thermal conductivity (∼0.31 Wm−1 K−1 at 300 K), which decays as the temperature is increased due to enhanced phonon–phonon scattering, as confirmed by the decreased phonon lifetimes at higher temperatures. The unique structure of this material coupled with the anisotropy and strong phonon anharmonicity depicts significant potential in 2D nanoelectronic applications.

Ordered high-dimensional defects enhancing phonon transport anisotropy in (GeTe)m(Bi2Te3)n

Anomalous Thermal Conductivity Enhancement in Low Dimensional Resonant Nanostructures Due to Imperfections

Evolution of defect structures leading to high ZT in GeTe-based thermoelectric materials

Anisotropic Thermoelectric Properties of GeTe Single Crystal

Grain Boundaries Induce Significant Decrease in Lattice Thermal Conductivity of CdTe

Atomic-scale tunable phonon transport at tailored grain boundaries

Anomalous Enhancement of Thermoelectric Performance in GeTe with Specific Interaxial Angle and Atomic Displacement Synergy

Direct Visualization of Thermal Conductivity Suppression Due to Enhanced Phonon Scattering Near Individual Grain Boundaries

Enhanced Thermoelectric Performance in Ge 0.955− x Sb x Te/FeGe 2 Composites Enabled by Hierarchical Defects

Decoupling Carrier-Phonon Scattering Boosts the Thermoelectric Performance of N-Type GeTe-Based Materials.

Anomalous lattice thermal conductivity increase with temperature in cubic GeTe correlated with strengthening of second-nearest neighbor bonds

In-doping induced resonant level and thermoelectric performance enhancement in n-type GeBi 2 Te 4 single crystals with intrinsically low lattice thermal conductivity

Controlled Phonon Transport via Chemical Bond Stretching and Defect Engineering: The Case Study of Filled β-Mn-Type Phases

Atomic‐Scale Visualization and Quantification of Configurational Entropy in Relation to Thermal Conductivity: A Proof‐of‐Principle Study in T‐gesb2te4

Structural Disorder in the High-Temperature Cubic Phase of GeTe

Vacancies tailoring lattice anharmonicity of Zintl-type thermoelectrics

Mie Scattering of Phonons by Point Defects in IV-VI Semiconductors PbTe and GeTe

Simultaneously achieving high <i>ZT</i> and mechanical hardness in highly alloyed GeTe with symmetric nanodomains

Atomic‐Scale Visualization and Quantification of Configurational Entropy in Relation to Thermal Conductivity: A Proof‐of‐Principle Study in t ‐GeSb 2 Te 4

Signature of phonon anharmonicity in highly in-plane anisotropic ternary HfGeTe4 single crystals

Glass-like thermal conductivity and phonon transport mechanism in disordered crystals