Controlled nano-roughening of the GaN surface by post-growth thermal annealing
W. Malek,M. Bouzidi,N. Chaaben,W. Belgacem,Abdullah S. Alshammari,M. Mohamed,A. Mballo,P. Vuong,J.P. Salvestrini,A. Bouazizi,M.K. Shakfa
DOI: https://doi.org/10.1016/j.apsusc.2024.159668
IF: 6.7
2024-02-16
Applied Surface Science
Abstract:GaN-based semiconductor structures have been widely used in photonic, electronic, and optoelectronic devices. However, due to the lack of lattice-matched substrates for GaN, several schemes related to material growth and device structure, including surface roughening, have been proposed to improve the efficiency of GaN-based devices. In our work, we developed an experimental approach to achieving a controllable roughening of the GaN epilayer surface by thermal post-annealing. The degree of surface roughness, i.e., nanometric modification, is controlled by the number of annealing cycles. The samples were annealed at 1200 °C under N 2 ambient. Under this condition, the first stage of GaN decomposition occurs. This annealing process led to the formation of Ga-rich GaN nanoparticles at the film surface with no significant change in the dislocation density. Furthermore, this treatment greatly decreases the compressive stress degree, resulting in a considerable improvement in the optical properties of the GaN samples.
chemistry, physical,physics, applied, condensed matter,materials science, coatings & films