Abstract:GaN on Si plays an important role in the integration and promotion of GaN-based wide-gap materials with Si-based integrated circuits (IC) technology. A series of GaN film materials were grown on Si (111) substrate using a unique plasma assistant molecular beam epitaxy (PA-MBE) technology and investigated using multiple characterization techniques of Nomarski microscopy (NM), high-resolution X-ray diffraction (HR-XRD), variable angular spectroscopic ellipsometry (VASE), Raman scattering, photoluminescence (PL), and synchrotron radiation (SR) near-edge X-ray absorption fine structure (NEXAFS) spectroscopy. NM confirmed crack-free wurtzite (w-) GaN thin films in a large range of 180–1500 nm. XRD identified the w- single crystalline structure for these GaN films with the orientation along the c-axis in the normal growth direction. An optimized 700 °C growth temperature, plus other corresponding parameters, was obtained for the PA-MBE growth of GaN on Si, exhibiting strong PL emission, narrow/strong Raman phonon modes, XRD w-GaN peaks, and high crystalline perfection. VASE studies identified this set of MBE-grown GaN/Si as having very low Urbach energy of about 18 meV. UV (325 nm)-excited Raman spectra of GaN/Si samples exhibited the GaN E2(low) and E2(high) phonon modes clearly without Raman features from the Si substrate, overcoming the difficulties from visible (532 nm) Raman measurements with strong Si Raman features overwhelming the GaN signals. The combined UV excitation Raman–PL spectra revealed multiple LO phonons spread over the GaN fundamental band edge emission PL band due to the outgoing resonance effect. Calculation of the UV Raman spectra determined the carrier concentrations with excellent values. Angular-dependent NEXAFS on Ga K-edge revealed the significant anisotropy of the conduction band of w-GaN and identified the NEXAFS resonances corresponding to different final states in the hexagonal GaN films on Si. Comparative GaN material properties are investigated in depth.

Twist Angle of Mosaic Structure in GaN Films Determined by X-ray Diffraction

Mosaic structure in epitaxial GaN film varying with thickness

Characterization of Crystal Lattice Constant and Dislocation Density of Crack-Free GaN Films Grown on Si(1 1 1)

Role of threading dislocation structure on the x‐ray diffraction peak widths in epitaxial GaN films

Determination of the Twist Angle of Gan Film by High Resolution X-Ray Diffraction

Structural Properties of GaN(0001) Epitaxial Layers Revealed by High Resolution X-ray Diffraction

Synthesis and Characterization of Heteroepitaxial Gan Films on Si(111)

Mosaic Structure Evolution in Gan Films with Annealing Time Grown by Metalorganic Chemical Vapour Deposition

Mosaic Structure and Its Influence on Carrier Mobility in Undoped Hexagonal GaN Thin Film

Crystal Tilts in Epitaxially Laterally Overgrown GaN Films Determined by Four-Circle X-Ray Diffraction

Study on the Dislocation of Epitaxial m-GaN Films Revealed by High Resolution X-Ray Diffration

Study of different type of dislocations in GaN thin films

Structural and Optical In-Plane Anisotropy of M-Plane GaN

Study on a-Plane GaN Thin Films Growth by MOCVD and Its r-Plane Anisotropy

Thickness Measurement of GaN Films by X-ray Diffraction

Crystalline Orientation and Anisotropy of Semi-Polar Gan Films Grown on M-Sapphire Substrate by Hydride Vapor Phase Epitaxy

Optical, Structural, and Synchrotron X-ray Absorption Studies for GaN Thin Films Grown on Si by Molecular Beam Epitaxy

Investigation of the Crystal Tilts in Laterally Epitaxial Overgrowth Gan Films Formed by Hydride Vapor Phase Epitaxy

Determination of the mosaic structure of GaN films by high resolution-ray diffraction

Crystalline Anisotropy of Β-Ga2o3 Thin Films on a C-Plane GaN Template and a Sapphire Substrate