Abstract:In this paper, the processing parameters of growing GaN epilayer by hydride vapor phase epitaxy are optimized The influences of the low-temperature (LT) nucleation layer growth time, WM precursor ratio and the growth temperature on GaN layer are investigated by the high-resolution X-ray diffraction (HRXRD) signature for the asymmetric and symmetric reflections. The investigation finds that the LT-nucleation layer not only supplies the nucleation centers having good crystal quality, but also promotes the lateral growth of the sequent high temperature (HT) growth. The optimal LT nucleation layer growth time, WEI precursor ratio and the growth temperature can effectively enhance lateral growth to reduce the crystal defects and are favorable to converting the growth mechanism from threedimension to two-dimension in HT growth. The structural and optoelectronic properties of the as-grown GaN layer with a thickness of 15 um at the optimal parameters are studied by scanning electron microcopy, atomic force microscopy (AFM), HRXRD, Raman spectra, and photoluminescence (PL) measurements. X-ray rocking curves show that the full widths at half maximum of (002) and (102) are 317 and 343 arcsec, respectively. The surface roughness (rms: root mean square) is 0.334 nm detected using AFM. These characteristics show that the sample has good lattice quality and smooth surface morphology. In PL spectrum, the near band edge emission is dominated by emission from excitons bound to neutral donors (D X) near 3.478 eV with 11 meV blue-shift and the yellow band emission is very weak. The results indicate that the GaN layer has good crystal quality and excellent optoelectronic properties, but a little biaxial in-plane compressive strain also exists in it due to the lattice and thermal mismatch.

Investigation of the Crystal Tilts in Laterally Epitaxial Overgrowth Gan Films Formed by Hydride Vapor Phase Epitaxy

Crystal Tilts in Epitaxially Laterally Overgrown GaN Films Determined by Four-Circle X-Ray Diffraction

Study of wing tilt in asymmetrically and laterally overgrowth of thick GaN films

Influences of Mask Width, Fill Factor, HCl Addition and C Doping on Wing Tilts in the Epitaxial Laterally Overgrown GaN Films by Hydride Vapor Phase Epitaxy

Microstructures Of Gan Films Laterally Overgrown On Si(111) By Hydride Vapour Phase Epitaxy

Optimization of the Parameters for Growth High-Qulity Gan Film by Hydride Vapor Phase Epitaxy

Synthesis and Characterization of Heteroepitaxial Gan Films on Si(111)

Epitaxial Lateral Overgrowth Of Gan By Hvpe And Movpe

Crystalline Orientation and Anisotropy of Semi-Polar Gan Films Grown on M-Sapphire Substrate by Hydride Vapor Phase Epitaxy

Lateral epitaxial overgrowth of GaN using diethyl gallium chloride in metal organic vapor phase epitaxy

Effects of Growth Temperature Modulated by HCl Flow Rate on the Surface and Crystal Qualities of Thick GaN by HVPE

The Effect of Gan Single Crystal Substrate Characteristics on Homo-Epitaxial Gan Films

Effect of growth temperature and V/III-ratio on the surface morphology of MOVPE-grown cubic zincblende GaN

The Influence of V/III Ratio on GaN Grown on Patterned Sapphire Substrate with Low Temperature AlN Buffer Layer by Hydride Vapor Phase Epitaxy

Epitaxial Lateral Overgrowth of GaN with Chloride-Based Growth Chemistries in Both Hydride and Metalorganic Vapor Phase Epitaxy

Properties of GaN film grown by hydride vapor phase epitaxy

A Study of Gan Regrowth on the Micro-Faceted Gan Template Formed by in Situ Hcl Etching

Effects of V/III Ratio on the Growth of a -Plane GaN Films

Strain in Gan Epi-Layer Grown by Hydride Vapor Phase Epitaxy