Abstract:GaN and its related Ⅲ - Ⅴ alloys have received much attention in recent years for their potential ability in short-wavelength light emitting diodes, laser diodes and photodetectors. However, due to the lack of a suitable latticematched bulk substrate, they are usually grown on Al2O3 or SiC substrates with a high density of threading dislocations (TDs). The origin of these dislocations has been suggested to be due to a peculiar growth mode-mosaic structure which can be characterized by means of tilt and twist angles. For wurtzite GaN the mean tilt angle of mosaic structure is related to the FWHM of (0002) diffraction peak,which can be easily measured by using XRD. Unfortunately, the twist of lattice planes is difficult to be measured directly. High-resolution X-ray diffraction was used to determine the twist angle of mosaic structure in GaN epitaxial layers grown on sapphire by metal-organic chemical vapor deposition (MOCVD). Rocking curves of five planes were investigated, (0002); (10(-1)3); (10(-1)2); (10(-1)1 ); and (20(-2)1) respectively. Pseudo-Voigt function was used to simulate the rocking-curve of every plane. The twist angles of GaN layers were easily obtained by extrapolating the full width at half maximum (FWHM) of diffraction peak of the planes. The twist angles of the films measured directly by φ-scans of the (1(-1)00) reflection in grazing-incidence X-ray diffraction (GIXRD) agree well with the extrapolated results. As far as we know, it's the first time that the extrapolated method was checked to be valid in this material, and the results are useful for the further study of GaN films.

Determination of the mosaic structure of GaN films by high resolution-ray diffraction

Thickness Measurement of GaN Films by X-ray Diffraction

Structural Properties of GaN(0001) Epitaxial Layers Revealed by High Resolution X-ray Diffraction

Mosaic structure in epitaxial GaN film varying with thickness

Twist Angle of Mosaic Structure in GaN Films Determined by X-ray Diffraction

Synthesis and Characterization of Heteroepitaxial Gan Films on Si(111)

Determination of the Twist Angle of Gan Film by High Resolution X-Ray Diffraction

Characterization of Crystal Lattice Constant and Dislocation Density of Crack-Free GaN Films Grown on Si(1 1 1)

Determine the structure and strain of GaN/Si epilayer by synchrotron radiation X-ray diffraction

X-ray diffraction reciprocal space and pole figure characterization of cubic GaN epitaxial layers grown on (0 0 1) GaAs by molecular beam epitaxy

Strain analysis on Al_xGa_(1-x)N/GaN by high resolution XRD

Real-time observation of liquid-gallium ordering on epitaxially-grown GaN(0001) by X-ray scattering measurements

Determination of Tetragonal Distortion of Al0.69In0.09Ga0.22N/GaN Heterostructure by RBS/C and HRXRD

Study on the Dislocation of Epitaxial m-GaN Films Revealed by High Resolution X-Ray Diffration

Properties of GaN film grown by hydride vapor phase epitaxy

X-Ray Diffraction Reciprocal Space And Pole Figure Characterization Of Cubic Gan Epitaxial Layers Grown On (001) Gaas By Molecular Beam Epitaxy

A Comparison of GaN Epilayers with Multiple Buffer Layers and with a Single Buffer Layer Grown on Si（111） Studied by HRXRD and RBS/Channeling

Growth and Characterization of GaN Films on Si(111) Substrate Using High-Temperature AlN Buffer Layer

Analysis of the Curvature of GaN Thick Films Grown by HVPE

Role of threading dislocation structure on the x‐ray diffraction peak widths in epitaxial GaN films

Mosaic Structure Evolution in Gan Films with Annealing Time Grown by Metalorganic Chemical Vapour Deposition