Abstract:GaN and its related Ⅲ - Ⅴ alloys have received much attention in recent years for their potential ability in short-wavelength light emitting diodes, laser diodes and photodetectors. However, due to the lack of a suitable latticematched bulk substrate, they are usually grown on Al2O3 or SiC substrates with a high density of threading dislocations (TDs). The origin of these dislocations has been suggested to be due to a peculiar growth mode-mosaic structure which can be characterized by means of tilt and twist angles. For wurtzite GaN the mean tilt angle of mosaic structure is related to the FWHM of (0002) diffraction peak,which can be easily measured by using XRD. Unfortunately, the twist of lattice planes is difficult to be measured directly. High-resolution X-ray diffraction was used to determine the twist angle of mosaic structure in GaN epitaxial layers grown on sapphire by metal-organic chemical vapor deposition (MOCVD). Rocking curves of five planes were investigated, (0002); (10(-1)3); (10(-1)2); (10(-1)1 ); and (20(-2)1) respectively. Pseudo-Voigt function was used to simulate the rocking-curve of every plane. The twist angles of GaN layers were easily obtained by extrapolating the full width at half maximum (FWHM) of diffraction peak of the planes. The twist angles of the films measured directly by φ-scans of the (1(-1)00) reflection in grazing-incidence X-ray diffraction (GIXRD) agree well with the extrapolated results. As far as we know, it's the first time that the extrapolated method was checked to be valid in this material, and the results are useful for the further study of GaN films.

Study of different type of dislocations in GaN thin films

Influence of Different Types of Threading Dislocations on the Carrier Mobility and Photoluminescence in Epitaxial Gan

Role of threading dislocation structure on the x‐ray diffraction peak widths in epitaxial GaN films

Study on the Dislocation of Epitaxial m-GaN Films Revealed by High Resolution X-Ray Diffration

Structural Properties of GaN(0001) Epitaxial Layers Revealed by High Resolution X-ray Diffraction

Mosaic Structure and Its Influence on Carrier Mobility in Undoped Hexagonal GaN Thin Film

Distribution of Dislocations in GaSb and InSb Epilayers Grown on GaAs (001) Vicinal Substrates

Study of Dislocation Densities of Thick GaN Films

High-resolution X-ray Diffraction Analysis on HVPE-grown Thick GaN Layers

Characterization of Crystal Lattice Constant and Dislocation Density of Crack-Free GaN Films Grown on Si(1 1 1)

An Easy Approach to Identify Dislocation Types in GaN Films Through Selective Chemical Etching and Atom Force Microscopy

Study on the Dislocations in GaN Films by Wet-Chemical Etching

High-resolution X-Ray Diffraction Studies of Highly Curved GaN Layers Prepared by Hydride Vapor Phase Epitaxy

Reduction of Dislocations in GaN Epilayer Grown on Si (111) Substrates Using a GaN Intermedial Layer

A Comparative Study of Methods for Calculating the Dislocation Density in GaN-on-Si Epitaxial Wafers

Synthesis and Characterization of Heteroepitaxial Gan Films on Si(111)

Twist Angle of Mosaic Structure in GaN Films Determined by X-ray Diffraction

Defect Cluster-Induced X-Ray Diffuse Scattering in GaN Films Grown by MOCVD

Dislocation Slip Behaviors in High-Quality Bulk GaN Investigated by Nanoindentation

Characterization of dislocations induced by Vickers indentation in GaN for explaining size ratios of dislocation patterns

X‐Ray Diffraction Microstrain Analysis for Extraction of Threading Dislocation Density of GaN Films Grown on Silicon, Sapphire, and SiC Substrates