Abstract:The propagation behavior of threading dislocations (TDs) and the effects of Burgers vectors in hydride vapor phase epitaxy (HVPE) GaN bulk crystals generated on Na-flux-grown GaN and in a commercially available HVPE-grown GaN bulk crystal were investigated. Analyses based on chemical etching and transmission electron microscopy (TEM) revealed a close correlation between the etch pit sizes and the Burgers vector of these TDs. The existence of TDs with the unique Burgers vector b = 1m + 1c was observed for the first time ever using a large-angle convergent-beam electron diffraction technique and plan-view bright-field scanning TEM. Multi-photon excitation photoluminescence microscopy observations showed that TDs with b = 1c had a meandering morphology in contrast to the linear morphology of TDs with b = 1a, 1a + 1c, or 1m + 1c in both types of HVPE-grown GaN crystals. The inclinations of TDs with b = 1a and 1a + 1c in HVPE-grown GaN on Na-flux-grown GaN were greatly affected by large symmetrical hexagonal hillocks. The TDs with b = 1a were inclined in the slope directions of the hillock planes, while those with b = 1a + 1c were inclined in the a directions parallel or antiparallel to the a component in their Burgers vector. These inclinations were readily explained by the isotropic elastic theory of an individual TD. The hillocks were produced around pairs of parallel mixed TDs for which the a components were opposite to one another. This phenomenon was attributed to inclusions at the interface between the Na-flux-grown GaN substrate and the HVPE-grown layer. The origins of other TDs including unusual ones having b = 1m + 1c are also discussed herein.

Characterization of dislocations induced by Vickers indentation in GaN for explaining size ratios of dislocation patterns

Propagation of threading dislocations and effects of Burgers vectors in HVPE-grown GaN bulk crystals on Na-flux-grown GaN substrates

Study of different type of dislocations in GaN thin films

Dislocation evolution in GaN-based Laser Diodes under nano-indentation

Dislocation Slip Behaviors in High-Quality Bulk GaN Investigated by Nanoindentation

Identification of dislocation characteristics in Na-flux-grown GaN substrates using bright-field X-ray topography under multiple-diffraction conditions

High-resolution X-ray Diffraction Analysis on HVPE-grown Thick GaN Layers

Defects in GaN Films Studied by Positron Annihilation Spectroscopy

An Easy Approach to Identify Dislocation Types in GaN Films Through Selective Chemical Etching and Atom Force Microscopy

Dislocation luminescence in GaN single crystals under nanoindentation

Determination of Dislocation Density in HVPE-GaN Layer

Nano-indentation Study of Dislocation Evolution in GaN-based Laser Diodes

Influence of Different Types of Threading Dislocations on the Carrier Mobility and Photoluminescence in Epitaxial Gan

Estimations of Low Temperature Dislocation Mobility in GaN

A Comparative Study of Methods for Calculating the Dislocation Density in GaN-on-Si Epitaxial Wafers

Dislocation Cross-Slip In Gan Single Crystals Under Nanoindentation

Dislocation Evolution in Anisotropic Deformation of GaN under Nanoindentation

Impact of dislocations on the thermal conductivity of gallium nitride studied by time-domain thermoreflectance

A study of dislocations generated by inclusions in gadolinium gallium garnet crystals by birefringence topography

Dislocation-induced nanoparticle decoration on a GaN nanowire

X-ray Analysis of GaN Film Grown by Hydride Vapor Phase Epitaxy