Abstract:The emerging ultrawide-bandgap AlGaN alloy system holds promise for the development of advanced materials in the next generation of power semiconductor and UV optoelectronic devices. Within this context, heterostructures based on III-nitrides are very popular in view of their applications as electronics and optoelectronics components. AlGaN-based deep UV emitters are gaining visibility for their disinfection capabilities. Likewise, high electron mobility transistors are attracting increasing attention owing to their superior electron transport which yields high-speed and high-power applications. Those devices are conventionally made of AlGaN/GaN heterostructures grown on foreign substrate. However, structural defects, including stress induced by a mismatch in unit cell parameters and the presence of dislocations, can not only decrease the efficiency of the light emitters (by facilitating the non-radiative recombination of electron-hole pairs), but also impede electron mobility within the two-dimensional electron gas at the AlGaN/GaN interface. Therefore, the significance of obtaining high-quality AlGaN layers becomes evident. Including a thin AlN interlayer between the GaN buffer layer and AlGaN is a possible answer to address these drawbacks. Not only we show that a thin AlN layer, approximately ≤ 3 nm in thickness, between the GaN buffer and AlGaN layers, is effective in decreasing the dislocation densities in the AlGaN layer. Still, this is responsible of an increase in the electron mobility of the resulting heterostructure compared to a classical AlGaN/GaN heterostructure.

Interaction between dislocations and He-implantation-induced voids in GaN epitaxial layers

Defects in GaN Films Studied by Positron Annihilation Spectroscopy

Characterisation of Defects at Non-Polar GaN/InGaN Junctions in Novel Materials for Application in Light Emitting Diodes

The formation mechanism of voids in physical vapor deposited AlN epilayer during high temperature annealing

Growth and impact of intrinsic interlayers in high temperature vapor phase epitaxy of GaN

Strain effects on the behavior of intrinsic point defects within the GaN/AlN interface

Vacancy-engineering-induced dislocation inclination in III-nitrides on Si substrates

Enhanced Damage Buildup in C+-implanted GaN Film Studied by a Monoenergetic Positron Beam

Dynamics Studies of Nitrogen Interstitial in GaN from Ab Initio Calculations

Research on Evolution of Relevant Defects in Heavily Mg-Doped GaN by H Ion Implantation Followed by Thermal Annealing

Void formation and failure in InGaN/AlGaN double heterostructures

Structural Properties of Ne Implanted GaN

Local Strain and Crystalline Defects in GaN/AlGaN/GaN(0001) Heterostructures Induced by Compositionally Graded AlGaN Buried Layers

Formation of Grown-In Nitrogen Vacancies and Interstitials in Highly Mg-Doped Ammonothermal GaN

Propagation of Misfit Dislocations from AlN/Si Interface into Si

Crystallization behavior and defect analysis on induction growth of hexagonal GaN in isothermal relaxation

Nano-indentation Study of Dislocation Evolution in GaN-based Laser Diodes

Dislocation evolution in GaN-based Laser Diodes under nano-indentation

Dopant-defect interactions and their impact on local crystal stoichiometry studies in Mg-doped GaN via atom probe tomography

AlN interlayer-induced reduction of dislocation density in the AlGaN epilayer

Horizontal Defects Parallel to the Interface in GaN Pyramids