Abstract:This study investigates the electrical transport properties of undoped and Si-doped, degenerate GaN heteroepitaxial films grown on sapphire by reactive rf sputtering of GaAs (and Si) in Ar-N2 mixture. The room temperature electrical measurements showed that the resistivity of undoped GaN film grown at 100% N2 was ~2 × 105 Ω cm, which reduced to ~1 Ω cm in Si-doped film, revealing the effect of Si doping. With decrease of N2 from 100% to 75%, the carrier concentration of Si-doped films increased from ~7 × 1018 cm-3 to ~2 × 1019 cm-3, but remained practically unchanged as N2 was decreased to 20%, which is explained by effects due to saturation of Si doping and increase of Ga interstitials as well as compensation by N interstitials and Ga vacancies. Undoped and Si-doped films grown below 20% N2 displayed similar carrier concentrations (~1020 cm-3), due to dominance of Ga interstitials. Both undoped and Si-doped films were degenerate and displayed increase of mobility with carrier concentration and temperature, which was analyzed by the combined effect of ionized impurity and dislocation scattering, using compensation ratio as fitting parameter. At carrier concentrations ≲1019 cm-3, the mobility was governed by both ionized impurity and dislocation scattering, while at higher carrier concentrations, ionized impurity scattering was found to dominate, limited by compensation due to acceptors. In spite of the degenerate character, the films displayed a small decrease of carrier concentration with temperature, along with a nearly linear decrease of mobility, which are explained by a marginal increase of compensation ratio with decrease of temperature, taking into account the band edge fluctuation effects. These features of electrical transport have not been much explored for heteroepitaxial, n-type degenerate GaN films, possessing high density of dislocations and point defects.

Influence of Different Types of Threading Dislocations on the Carrier Mobility and Photoluminescence in Epitaxial Gan

Study of different type of dislocations in GaN thin films

Carrier diffusion in GaN -- a cathodoluminescence study. III: Nature of nonradiative recombination at threading dislocations

Influence of Threading Dislocations on Physical Properties of GaN Epilayers

Mosaic Structure and Its Influence on Carrier Mobility in Undoped Hexagonal GaN Thin Film

Influence of Dislocation Density on Internal Quantum Efficiency of Gan-Based Semiconductors

Role of threading dislocation structure on the x‐ray diffraction peak widths in epitaxial GaN films

Study of Dislocation Densities of Thick GaN Films

Evolution and Control of Dislocations in Gan Grown on Cone-Patterned Sapphire Substrate by Metal Organic Vapor Phase Epitaxy

Morphology Of Threading Dislocations In High-Resistivity Gan Films Observed By Transmission Electron Microscopy

Determination of the carrier diffusion length in GaN from cathodoluminescence maps around threading dislocations: fallacies and opportunities

Study on the Dislocation of Epitaxial m-GaN Films Revealed by High Resolution X-Ray Diffration

Different Temperature Dependence of Carrier Transport Properties Between Alxga1-Xn/Inyga1-Yn/Gan and Alxga1-Xn/Gan Heterostructures

Effect of Dislocations on Electrical and Optical Properties of N-Type Al0.34Ga0.66N

Structural Properties of GaN(0001) Epitaxial Layers Revealed by High Resolution X-ray Diffraction

Dislocation Clustering and Luminescence Nonuniformity in Bulk Gan and Its Homoepitaxial Film

Application of multiphoton photoluminescence in characterization of GaN dislocations

The Effect of Gan Single Crystal Substrate Characteristics on Homo-Epitaxial Gan Films

Electrical transport in epitaxially grown undoped and Si-doped degenerate GaN films

X‐Ray Diffraction Microstrain Analysis for Extraction of Threading Dislocation Density of GaN Films Grown on Silicon, Sapphire, and SiC Substrates