Abstract:A range of high quality Ga1-xMnxN layers have been grown by molecular beam epitaxy with manganese concentration 0.2 < x < 10%, having the x value tuned by changing the growth temperature (Tg) between 700 and 590 °C, respectively. We present a systematic structural and microstructure characterization by atomic force microscopy, secondary ion mass spectrometry, transmission electron microscopy, powder-like and high resolution X-ray diffraction, which do not reveal any crystallographic phase separation, clusters or nanocrystals, even at the lowest Tg. Our synchrotron based X-ray absorption near-edge spectroscopy supported by density functional theory modelling and superconducting quantum interference device magnetometry results point to the predominantly +3 configuration of Mn in GaN and thus the ferromagnetic phase has been observed in layers with x > 5% at 3 < T < 10 K. The main detrimental effect of Tg reduced to 590 °C is formation of flat hillocks, which increase the surface root-mean-square roughness, but only to mere 3.3 nm. Fine substrates surface temperature mapping has shown that the magnitudes of both x and Curie temperature (Tc) correlate with local Tg. It has been found that a typical 10 °C variation of Tg across 1 inch substrate can lead to 40% dispersion of Tc. The established here strong sensitivity of Tc on Tg turns magnetic measurements into a very efficient tool providing additional information on local Tg, an indispensable piece of information for growth mastering of ternary compounds in which metal species differ in almost every aspect of their growth related parameters determining the kinetics of the growth. We also show that the precise determination of Tc by two different methods, each sensitive to different moments of Tc distribution, may serve as a tool for quantification of spin homogeneity within the material.

Liquid phase epitaxy of GaN films on sapphire substrates under an atmospheric pressure nitrogen ambience

Analysis of GaN Crystal Growth Mechanism in Liquid-Phase Epitaxial Na-flux Method

Determination of effective Ga/N ratio to control GaN growth behavior in liquid-target reactive magnetron sputter epitaxy

Growth and characterization of low-temperature grown GaN with high Fe doping

Direct Growth of GaN on Sapphire with Non-Catalytic CVD Graphene Layers at High Temperature

Microstructures of GaN films grown by low pressure metal-organic vapor phase epitaxy on sapphire substrates

Growth of Fe doped semi-insulating GaN by metalorganic chemical vapor deposition

Microstructures of GaN films grown by low pressure metal-organic vapor phase epitaxy on (0 1 1 2) sapphire substrates

Growth of Single-Crystalline GaN Films on Ga-Free Langasite-Type Crystals by Metal-Organic Chemical Vapor Deposition

Growth condition dependence of structure and surface morphology of GaN films on (111)GaAs substrates prepared by reactive sputtering

Impact of substrate temperature on magnetic properties of plasma-assisted molecular beam epitaxy grown (Ga,Mn)N

Epitaxy of Single-Crystalline GaN Films on Novel Ca3Ta(Ga0.5Al0.5)3Si2O14 Substrates by Metal-Organic Chemical Vapor Deposition

Homo-epitaxial Growth of High Crystal Quality GaN Thin Films by Plasma Assisted–molecular Beam Epitaxy

Epitaxial growth of nonpolar GaN films on r -plane sapphire substrates by pulsed laser deposition

A Study on the Growth Process for Liquid Phase Epitaxy of GaN Crystal Using Na–Li–Ca Flux

X-ray Diffraction, Photoluminescence and Secondary Ion Mass Spectroscopy Study of GaN Films Grown on Si(111) Substrate by Vacuum Reactive Evaporation

Enhancement of optical property and crystal structure for GaN films on 2D MoS2 buffer layer by nitridation treatment

GaN Single Crystals: Growth Mechanism and Temperature-Modulated Growth Using Li3N Flux

The Effects of Sapphire Nitridation on GaN Growth by Metalorganic Chemical Vapour Deposition

Epitaxial Growth of GaN Films on Chemical-Vapor-Deposited 2D MoS2 Layers by Plasma-Assisted Molecular Beam Epitaxy

The growth and characterization of GaN grown on an Al2O3 coated (0 0 1) Si substrate by metalorganic vapor phase epitaxy