Growth and nitridation of β-Ga 2 O 3 thin films by Sol-Gel spin-coating epitaxy with post-annealing process

Yuxia Zhu,Xiangqian Xiu,Fei Cheng,Yuewen Li,Zili Xie,Tao Tao,Peng Chen,Bin Liu,Rong Zhang,You-Dou Zheng

DOI: https://doi.org/10.1007/s10971-021-05629-4

2021-01-01

Journal of Sol-Gel Science and Technology

Abstract:β-Ga 2 O 3 thin films have been successfully prepared on (0001) sapphire substrate by simple and effective sol-gel spin-coating method with post-annealing process (SSP). The effects of different preheating temperatures on the crystal quality and surface morphology of β-Ga 2 O 3 films have been systematically investigated. The β-Ga 2 O 3 thin films exhibit good crystallinity with ( 2̅ 01) preferred orientation and smooth surface morphology. The results showed that β-Ga 2 O 3 thin films directly grown on (0001) sapphire by SSP method have comparable or better crystal quality compared with other epitaxial methods. The β-Ga 2 O 3 thin films annealed at 1000 °C with the preheating temperature of 300 °C and above have smooth and crack-free surface morphology. The single-domain-growth mode of β-Ga 2 O 3 thin film prepared on 7° off-angled (0001) sapphire substrate toward <11 2̅ 0> plane has been confirmed by SSP method, and the porous GaN layers have been obtained by the nitridation of the Sol-Gel grown β-Ga 2 O 3 thin films for future applications in high-quality free-standing GaN substrates.