Growth and nitridation of β-Ga2O3 thin films by Sol-Gel spin-coating epitaxy with post-annealing process

Yuxia Zhu,Xiangqian Xiu,Fei Cheng,Yuewen Li,Zili Xie,Tao Tao,Peng Chen,Bin Liu,Rong Zhang,You-Dou Zheng

DOI: https://doi.org/10.1007/s10971-021-05629-4

2021-09-08

Abstract:β-Ga₂O₃ thin films have been successfully prepared on (0001) sapphire substrate by simple and effective sol-gel spin-coating method with post-annealing process (SSP). The effects of different preheating temperatures on the crystal quality and surface morphology of β-Ga₂O₃ films have been systematically investigated. The β-Ga₂O₃ thin films exhibit good crystallinity with (<span class="mathjax-tex"><span class="mjpage"><svg xmlns:xlink="http://www.w3.org/1999/xlink" width="1.162ex" height="2.509ex" style="vertical-align: -0.338ex;" viewBox="0 -934.9 500.5 1080.4" role="img" focusable="false" xmlns="http://www.w3.org/2000/svg"><g stroke="currentColor" fill="currentColor" stroke-width="0" transform="matrix(1 0 0 -1 0 0)"> <use xlink:href="#MJMAIN-32" x="0" y="0"></use> <use xlink:href="#MJMAIN-AF" x="0" y="231"></use></g></svg></span></span>01) preferred orientation and smooth surface morphology. The results showed that β-Ga₂O₃ thin films directly grown on (0001) sapphire by SSP method have comparable or better crystal quality compared with other epitaxial methods. The β-Ga₂O₃ thin films annealed at 1000 °C with the preheating temperature of 300 °C and above have smooth and crack-free surface morphology. The single-domain-growth mode of β-Ga₂O₃ thin film prepared on ~7° off-angled (0001) sapphire substrate toward &lt;11<span class="mathjax-tex"><span class="mjpage"><svg xmlns:xlink="http://www.w3.org/1999/xlink" width="1.162ex" height="2.509ex" style="vertical-align: -0.338ex;" viewBox="0 -934.9 500.5 1080.4" role="img" focusable="false" xmlns="http://www.w3.org/2000/svg"><g stroke="currentColor" fill="currentColor" stroke-width="0" transform="matrix(1 0 0 -1 0 0)"> <use xlink:href="#MJMAIN-32" x="0" y="0"></use> <use xlink:href="#MJMAIN-AF" x="0" y="231"></use></g></svg></span></span>0&gt; plane has been confirmed by SSP method, and the porous GaN layers have been obtained by the nitridation of the Sol-Gel grown β-Ga₂O₃ thin films for future applications in high-quality free-standing GaN substrates.<svg xmlns="http://www.w3.org/2000/svg" style="display: none;"><defs id="MathJax_SVG_glyphs"><path stroke-width="1" id="MJMAIN-32" d="M109 429Q82 429 66 447T50 491Q50 562 103 614T235 666Q326 666 387 610T449 465Q449 422 429 383T381 315T301 241Q265 210 201 149L142 93L218 92Q375 92 385 97Q392 99 409 186V189H449V186Q448 183 436 95T421 3V0H50V19V31Q50 38 56 46T86 81Q115 113 136 137Q145 147 170 174T204 211T233 244T261 278T284 308T305 340T320 369T333 401T340 431T343 464Q343 527 309 573T212 619Q179 619 154 602T119 569T109 550Q109 549 114 549Q132 549 151 535T170 489Q170 464 154 447T109 429Z"></path><path stroke-width="1" id="MJMAIN-AF" d="M69 544V590H430V544H69Z"></path></defs></svg>

materials science, ceramics