Preparation of high-quality CuGa2O4 film via annealing process of Cu/β-Ga2O3

Jianjun Shi,Hongwei Liang,Xiaochuan Xia,Zhuo Li,Ze Long,Heqiu Zhang,Yang Liu

DOI: https://doi.org/10.1007/s10853-019-03666-7

IF: 4.5

2019-05-13

Journal of Materials Science

Abstract:High-quality CuGa2O4 film has been successfully prepared on β-Ga2O3 (2¯01\documentclass[12pt]{minimal}\usepackage{amsmath}\usepackage{wasysym}\usepackage{amsfonts}\usepackage{amssymb}\usepackage{amsbsy}\usepackage{mathrsfs}\usepackage{upgreek}\setlength{\oddsidemargin}{-69pt}\begin{document}$$ \bar{2}01 $$\end{document}) single-crystal substrate via annealing method at 1050 °C temperature under air after evaporating Cu film. According to high-resolution X-ray diffraction measurement results, the crystallinity of CuGa2O4 film and epitaxial relationship between CuGa2O4 film and β-Ga2O3 (2¯01\documentclass[12pt]{minimal}\usepackage{amsmath}\usepackage{wasysym}\usepackage{amsfonts}\usepackage{amssymb}\usepackage{amsbsy}\usepackage{mathrsfs}\usepackage{upgreek}\setlength{\oddsidemargin}{-69pt}\begin{document}$$ \bar{2}01 $$\end{document}) substrate was confirmed. The CuGa2O4 film has the preferred [111] orientation and the full-width half-maximum of CuGa2O4 film of (222) peak is 0.228°. The CuGa2O4 (111) plane is parallel to the β-Ga2O3 (2¯01\documentclass[12pt]{minimal}\usepackage{amsmath}\usepackage{wasysym}\usepackage{amsfonts}\usepackage{amssymb}\usepackage{amsbsy}\usepackage{mathrsfs}\usepackage{upgreek}\setlength{\oddsidemargin}{-69pt}\begin{document}$$ \bar{2}01 $$\end{document}) plane (out-plane) and the CuGa2O4 [1¯1¯2\documentclass[12pt]{minimal}\usepackage{amsmath}\usepackage{wasysym}\usepackage{amsfonts}\usepackage{amssymb}\usepackage{amsbsy}\usepackage{mathrsfs}\usepackage{upgreek}\setlength{\oddsidemargin}{-69pt}\begin{document}$$ \bar{1}\bar{1}2 $$\end{document}], and [110] directions are parallel to the β-Ga2O3 [102] and [010] directions (in-plane), respectively. In addition, the lattice mismatch between CuGa2O4 [111] and β-Ga2O3 (2¯01\documentclass[12pt]{minimal}\usepackage{amsmath}\usepackage{wasysym}\usepackage{amsfonts}\usepackage{amssymb}\usepackage{amsbsy}\usepackage{mathrsfs}\usepackage{upgreek}\setlength{\oddsidemargin}{-69pt}\begin{document}$$ \bar{2}01 $$\end{document}) substrate has also been calculated. These results suggest that high-quality and preferred orientation CuGa2O4 film can be prepared on β-Ga2O3 (2¯01\documentclass[12pt]{minimal}\usepackage{amsmath}\usepackage{wasysym}\usepackage{amsfonts}\usepackage{amssymb}\usepackage{amsbsy}\usepackage{mathrsfs}\usepackage{upgreek}\setlength{\oddsidemargin}{-69pt}\begin{document}$$ \bar{2}01 $$\end{document}) substrate with Cu film.

materials science, multidisciplinary