Structrual analyses of Ga2+xO3-x thin films grown on sapphire substrates

Pan Hui-Ping,Cheng Feng-Feng,Li Lin,Horng Ray-Hua,Yao Shu-De

DOI: https://doi.org/10.7498/aps.62.048801

IF: 0.906

2013-01-01

Acta Physica Sinica

Abstract:Ga2+xO3-x thin films grown on sapphire substrates by metal-organic chemical vapor deposition under different conditions (temperature pressure) are studied by rutherford backscattering spectrometry/channeling. The structural information and crystalline quality are further investigated by high resolution X-ray diffraction (HR-XRD). The results suggest that at the same growth-temperature the crystalline quality is improved with pressure decreasing, while chi(min) reaches a minimum 14.5% when the pressure decreases to 15 Torr (1 Torr = 133.322 Pa). Then if the pressure is kept at 15 Torr, all films present similar crystalline qualities, which hints that the temperature is not a chief factor. Moreover, films prepared under the same condition are annealed at different temperatures: 700, 800 and 900 degrees C. At first the crystalline quality is improved by increasing the annealing temperature and reaches a best chi(min) of 11.1%. Nevertheless, as the annealing temperature is further increased, the samples become decomposed. XRD spectra of annealed samples each reveal a strong peak of Ga2O3 ((4) over bar 02), indicating that the epitaxial layer has a preferred orientation ((4) over bar 02).