Growth of $\beta$-Ga$_{2}$O$_{3}$ Films on Sapphire by Hydride Vapor Phase Epitaxy

Ze-Ning Xiong,Xiangqian Xiu,Yue-Wen Li,Xuemei Hua,Zili Xie,Peng Chen,Bin Liu,Ping Han,Rong Zhang,Youdou Zheng

DOI: https://doi.org/10.1088/0256-307X/35/5/058101

2018-01-01

Chinese Physics Letters

Abstract:Two-inch Ga2O3 films with (201)-orientation are grown on c-sapphire at 850-1050 degrees C by hydride vapor phase epitaxy. High-resolution x-ray diffraction shows that pure beta-Ga2O3 with a smooth surface has a higher crystal quality, and the Raman spectra reveal a very small residual strain in beta-Ga2O3 grown by hydride vapor phase epitaxy compared with bulk single crystal. The optical transmittance is higher than 80% in the visible and near-UV regions, and the optical bandgap energy is calculated to be 4.9eV.