Abstract:Wurtzite aluminum nitride (AlN) crystal has a non-centrosymmetric crystal structure with only a single axis of symmetry. In an AlN crystal, the electronegativity difference between the Al atom and N atom leads to a distortion of electron cloud distribution outside the nucleus and a spontaneous polarization (SP) along the c-axis direction. The N-polar surface along the directions of [000-1] has higher surface energy than the Al-polar surface along the directions of [0001]. Due to the different atomic arrangement, Al atoms on the Al-polar surface bond with O and OH− in the environment to generate Al2O3·xH2O, which prevents the reaction from occurring inside the crystal. After the Al2O3·xH2O dissolve in an alkaline environment, N atoms have three dangling bonds exposed on the surface, which can also protect OH− from destroying the internal Al-N bonds, so the Al-polar surface is more stable than the N-polar surface.

What problem does this paper attempt to address?

The problem that this paper attempts to solve is to explore the differences in the stability of different polar surfaces in aluminum nitride single crystals. Specifically, the paper experimentally studied the differences in the behavior of Al - polar and N - polar surfaces in aluminum nitride (AlN) crystals during etching and polishing processes, as well as the impact of these differences on the stability of the crystal surfaces. In addition, the paper also explored the performance of different polar surfaces during the oxidation process, especially the differences in the adsorption energy of oxygen atoms in the air, in order to further understand the chemical stability of these surfaces. ### Main Research Contents 1. **Experimental Methods**: - **Polishing Experiment**: Different polar surfaces of AlN crystals were polished by a chemical - mechanical polisher, and the surface morphology after polishing was observed using a scanning electron microscope (SEM). - **Etching Experiment**: AlN crystals were immersed in a molten mixed solution of KOH and NaOH, and the changes in surface morphology at different etching times were observed. 2. **Result Analysis**: - **Polishing Experiment Results**: The Al - polar surface showed higher stability during the polishing process and required a longer time to reach the same roughness. - **Etching Experiment Results**: The Al - polar surface exhibited selective etching in a strongly alkaline solution, forming regular hexagonal etching pits; while the N - polar surface showed random etching, forming irregular hill - like structures. - **Oxidation Experiment Results**: By calculating the adsorption energy of oxygen atoms on different polar surfaces, it was found that the Al - polar surface was more likely to adsorb oxygen atoms and form an oxide layer. This is consistent with the experimentally observed thicker oxide layer formed on the Al - polar surface in the air. ### Conclusion Through experiments and theoretical calculations, the paper revealed the differences in the stability of different polar surfaces in AlN crystals. The Al - polar surface shows higher stability during polishing and etching processes and is more likely to form a protective oxide layer in the air, thus having higher chemical stability. These findings are of great significance for the application of AlN crystals in semiconductor devices, especially in situations where high stability and low defect density are required.

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