Abstract:In this study, the process of surface morphology control was researched by combining the computation fluid dynamics (CFD) simulations and physical vapor transport (PVT) growth experiments. The results indicate the essentiality of preserving the surface structure of SiC substrate with macroscopic steps at the initial stage of the heterogeneous PVT growth. We identified an optimal range of growth temperature (Tg) and pressure to maintain the active Al vapor below a critical threshold. In the subsequent process, the pivotal factor for controlling the surface morphology of the AlN layer is identified as the supersaturation near the growing surface. Excessive supersaturation leads to a transition from a 2D to a 3D growth mode, resulting in a shift from a smooth to a rough surface morphology. An appropriate level of supersaturation can be achieved by carefully controlling the Tg, striking a balance between high surface quality and growth rate. Herein, we proposed a two-step PVT method for cultivating high-surface-quality AlN crystals on SiC substrates. At the first stage, the Tg is maintained below a threshold corresponding to the critical Al vapor pressure to preserve the surface structure until the SiC surface is completely covered by AlN. Then, Tg is elevated to near transition temperature (Ttran) to continue AlN single crystal growth at a proper rate for a long time, where Ttran is defined as the growth temperature at which the transition of the dominant mode from step growth to 3D growth happens. Two-inch-diameter AlN single crystals of thicknesses of nearly 1 mm with a smooth and lustrous surface have been obtained on SiC substrate by the two-step method.

Formation of aluminum nitride clusters by cyclic vapor–solid process

Growth of Spontaneous Nucleation AlN Crystals by Al-Base Alloy Evaporation in Nitrogen Atmosphere

Structure and Optical Properties of AlN Crystals Grown by Metal Nitride Vapor Phase Epitaxy with Different V/III Ratios.

Morphology Evolution, Growth Mechanism and Optical Properties of AlN Nanostructures

Growth of aluminium nitride whiskers by sublimation-recrystallization method

Crystal Nucleation in Al-Ni Alloys: an Unsupervised Chemical and Topological Learning Approach

Growth of AlN Nanobelts, Nanorings and Branched Nanostructures

Catalyst-Free Synthesis, Morphology Evolution and Optical Property of One-Dimensional Aluminum Nitride Nanostructure Arrays

Phase-equilibrium-dominated Vapor-Liquid-solid Growth Mechanism.

Growth Mechanism Of Aln Synthesized By Directed Nitridation Of Molten Aluminium Alloys

Vapor-Solid Growth And Characterization Of Aluminum Nitride Nanocones

Morphologies and Growth Mechanisms of Aluminum Nitride Whiskers Synthesized by Carbothermal Reduction

Sublimation Growth of Aluminum Nitride on Silicon Carbide Substrate with Aluminum Nitride–silicon Carbide Alloy Transition Layer

Controllable Synthesis of One-Dimensional Aluminum Nitride Nanostructures Through Vapor-Solid Epitaxial Growth

Synthesis of Aluminum Nitride Nanocrystals and Platelets

Surface Control of AlN Single Crystal Growth on SiC Substrate

Formation of AlN whiskers by nitridation of Al/AlN powders

Modeling of Multi-Species Transfer During Aluminum Nitride Vapor Growth

Influence of the Nucleation Layer Morphology on the Structural Property of AlN Films Grown on C-Plane Sapphire by MOCVD

Seeded Growth of AlN Crystals on Nonpolar Seeds Via Physical Vapor Transport

0001] oriented aluminum nitride one-dimensional nanostructures: synthesis, structure evolution, and electrical properties