Morphologies and Growth Mechanisms of Aluminum Nitride Whiskers Synthesized by Carbothermal Reduction

RL Fu,HP Zhou,L Chen,Y Wu

DOI: https://doi.org/10.1016/s0921-5093(99)00047-7

1999-01-01

Abstract:The growth mechanism and morphologies of AlN whiskers prepared by the carbothermal reduction method are studied as well as the technological condition. All experiments were carried out in a vertical, controlled-atmosphere, graphite element resistance furnace. The reactor chamber volume is Φ250×210 mm, and the reactant weight is about 20 g each times (it contains about 70 wt.% Al2O3). Nitrogen pressure in the furnace is 0.1 MPa (1 atm). The optimum growth condition is at 1700°C for 5 h with flowing nitrogen (0.6 l min−1), when the raw materials are α-Al2O3 and graphite (Al2O3:C=4:1 in weight). The yield of AlN whiskers is about 3–5 g each time, and 50 wt.% or more of Al2O3 can convert to AlN whiskers. Generally, whiskers with hexagonal cross section grow along 〈0001〉 and plate-like whiskers have a growth orientation parallel to 〈0111〉 et al other than 〈0001〉. During the growth of whiskers, the VLS mechanism and VS mechanism serve the function together. In the early stage, α-Al2O3 will react with CaO to form Ca-aluminates such as CaO·6Al2O3(CA6), CaO·2Al2O3(CA2), CaO·Al2O3 (CA). These Ca-aluminates can provide liquid catalysts for the nucleation of AlN whiskers. After that, the AlN whiskers will grow out from the substrate surface by the VS mechanism. As proximity to substrate surface, there is less growth space and higher supersaturation, and far from substrate surface, there is large growth space and low supersaturation. So near the substrate surface AlN whiskers are small and with irregular shape. Far from the substrate surface, AlN whiskers are sensibly straight and with regular shape.