Abstract:Self assembled AlN nanowires (NWs) are grown by plasma assisted molecular beam epitaxy (PAMBE) on SiO2 / Si (111) substrates. Using a combination of in-situ reflective high energy electron diffraction and ex situ X ray diffraction (XRD), we show that the NWs grow nearly strain free, preferentially perpendicular to the amorphous SiO2 interlayer and without epitaxial relationship to Si(111) substrate, as expected. Scanning electron microscopy investigation reveals significant NWs coalescence, which results in their progressively increasing diameter and formation of columnar structures with non hexagonal cross section. Making use of scanning transmission electron microscopy (STEM), the NWs initial diameters are found in the 20 to 30 nm range. In addition, the formation of a thin (30 nm) polycrystalline AlN layer is observed on the substrate surface. Regarding the structural quality of the AlN NWs, STEM measurements reveal the formation of extended columnar regions, which grow with a virtually perfect metal-polarity wurtzite arrangement and with extended defects only sporadically observed. Combination of STEM and electron energy loss spectroscopy (EELS) reveals the formation of continuous aluminum oxide (1 to 2 nm) on the NW surface. Low temperature photoluminescence measurements reveal a single near band edge (NBE) emission peak, positioned at 6.03 eV (at 2 K), a value consistent with nearly zero NW strain evidenced by XRD and in agreement with the values obtained on AlN bulk layers synthesized by other growth techniques. The significant full width at half maximum of NBE emission, found at 20 meV (at 2 K), suggests that free and bound excitons are mixed together within this single emission band.

Formation Mechanism and Photoluminescence of Aln Nanowhiskers

Formation of AlN whiskers by nitridation of Al/AlN powders

Growth of aluminium nitride whiskers by sublimation-recrystallization method

Growth and Microstructure of Aln Whiskers and Dendrites

Formation and photoluminescence properties of AlN nanowires

Facile solvent-free synthesis of pure-phased AlN nanowhiskers at a low temperature

Structure Characteristics of AlN Whiskers Fabricated by the Carbo-Thermal Reduction Method

Morphology Evolution, Growth Mechanism and Optical Properties of AlN Nanostructures

Morphologies and Growth Mechanisms of Aluminum Nitride Whiskers Synthesized by Carbothermal Reduction

Morphologies and growth mechanisms of aluminium nitride whiskers

Fabricaion process and growth characteristics of A1N whiskers by sublimation-recrystallization method

Thermodynamics and Kinetic Considerations behind the Growth of AlN Whiskers Synthesized by Carbothermal Reduction

Morphology-controlled Synthesis of Hexagonal AlN Whiskers by Direct Nitridation of Aluminum and Alumina Mixture

Extended vapor?liquid?solid growth and field emission properties of aluminium nitride nanowires

Growth of AlN Nanobelts, Nanorings and Branched Nanostructures

Combustion Synthesis of AlN Whiskers

Structural and optical properties of self-assembled AlN nanowires grown on SiO2/Si substrates by molecular beam epitaxy

Fabrication of High Purity AIN Whisker

Preparation and Characterization of AlN-Based Hierarchical Nanostructures with Improved Chemical Stability

Investigation On Combustion Synthesis Of Aln Whisker

Synthesis, magnetism and photoluminescence of Mn doped AlN nanowires