Abstract:We experimentally investigate the microstructures and growth features of the AlN epilayers on c-Al2O3 (0001) substrates grown by ammonia-free high temperature metalorganic chemical vapor deposition (AFHT-MOCVD). Besides the conventional threading dislocations (TDs) in the AlN epilayer and the voids at the AlN epilayer/substrate interface, lattice-polarity inversion phenomenon is confirmed in the AlN growth, where laterally distributed zigzag inversion domain boundary (IDB) is observed. Lattice-polarity at different points in the AlN epilayer is directly determined by high-resolution scanning transmission electron microscope (HR-STEM). A series of the AlN morphology characterizations by scanning electron microscope (SEM) with and w/o KOH etching faithfully reproduces the lattice-polarity inversion process at the different AlN growth stages. The AlN micro-crystal with N-polarity is firstly grown on the sapphire substrate. Following, the lattice-polarity inversion process begins to appear here and there with the small Al-polar AlN trapezoid formation. With the growth in progress, an IDB formation with a laterally distributed zigzag shape is achieved due to the higher growth rates in Al-polar AlN both in vertical and lateral directions. Finally, the initially grown N-polar AlN is completely covered by the Al-polar AlN, resulting in a pure Al-polar AlN epilayer on the top. Our results in this study give deep insights to the mechanism understanding of the unique growth technique for the high quality AlN growth, which is important for the optical and the electronic device applications.

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