Abstract:The GaAs(001) surface exhibits various surface phases depending on the surface temperature and As:Ga flux ratio during growth by molecular beam epitaxy. Using scanning tunneling microscopy and first principles total energy calculation, we carried out a systematic study of various Ga-rich phases, such as the 4 × 2 and 4 × 6 phases, utilizing migration enhanced epitaxy. Based on this investigation, we are able to propose a simple and unified structural model for the evolution of surface phases. For the Ga-rich 4 × 2 phase, we determined that Beigelsen's two Ga-dimer model fits best to our experimental and theoretical results; this consists of two Ga-dimers on the top layer and an additional Ga-dimer on the third layer, a mirror image of Chadi's two-dimer model for the As-rich 2 × 4 phase. Our direct observations reveal that there are two distinct 4 × 6 phases: (a) a more Ga-rich single ‘genuine’ 4 × 6 symmetry and (b) a less Ga-rich ‘pseudo’ 4 × 6 phase which is a mixture of the As-rich 2 × 6 phase and the reconstructed Ga-rich 4 × 2 or the ‘genuine’ 4 × 6 phase. Thus the Ga coverage of the ‘pseudo’ 4 × 6 phase can vary in a wide range depending strongly on the preparation process.

Morphology and reconstructed unit cell at GaAs(001)-(2×6)surface

Step Bunching Formation On Gaas(001) Introduced By Surface Reconstruction

Structures Of The Ga-Rich 4x2 And 4x6 Reconstructions Of The Gaas(001) Surface

Structures of the Ga-Rich4×2and4×6Reconstructions of the GaAs(001) Surface

Atomic structure of the Ge(001)-(7x5.5)-Ga surface

Scanning Probe Microscopy: Present Status and New Development. Scanning Tunneling Microscopy Study of GaAs(001) Surfaces (II).

Atomic Structures on a GaAs(001) Surface Grown by Molecular Beam Epitaxy

C (4x4) Reconstruction On Arsenic-Rich Gaas (001) Surface After Phase Transition

Surface Morphology of GaAs(001) Grown by Solid- and Gas-Source Molecular Beam Epitaxy

Bi- and Au-Induced Reconstructions on GaAs(001)-2 ×4 Surface

MBE-STM study of the Ga-rich 4 × 2 phase of the GaAs(001) surface

Surface Ordering of the Molecular Beam Epitaxially Grown GaAs(001)-2×4-As Reconstruction

Structures Of Gan(0001)-(2x2), -(4x4), And -(5x5) Surface Reconstructions

Surface geometry of GaAs(001) surface Ga-rich phases grown by molecular beam epitaxy

Characterization at atomic scale of epitaxially grown In 0.1Ga 0.86As/GaAs(4×3) surface

Surface Structure of GaAs(001)-(2Ã4) Î±, Î² and Î³ Phases

Structures of GaN(0001)-(2 × 2), -(4 × 4), and -(5 × 5) surface reconstructions

Surface Structure and Reconstructions of HgTe（111） Surfaces

Dipole coupling induced magnetic ordering in an ensemble of nanostructured islands

Research on the Surface Morphology of Al X Ga 1− X As in Molecular Beam Epitaxy

First-principles investigations of GaAs (112)-(2×2) surface reconstruction