Abstract:Fullerene (C60) single crystals with exceptionally low defects and nearly perfect translational symmetry make them appealing in achieving high-performance n-type organic transistors. However, because of its natural 0D structure, control over continuous crystallization of C60 over a large area is extremely challenging. Here, the authors report a solution-phase epitaxial approach for wafer-scale growth of continuously aligned C60 single crystals. This method enables the rational control of the density of nucleation event at meniscus front by confining the size and shape of meniscus with a microchannel template. In this case, a single nucleus as seed crystal can be formed at the front of meniscus, and then epitaxial growth from the seed crystal occurs with continuous retreat of the meniscus. As a result, highly uniform C60 single-crystal array with ultralow defect density is obtained on 2-inch substrate. Organic field-effect transistors made from the C60 single-crystal array show a high average electron mobility of 2.17 cm2 V−1 s−1, along with a maximum mobility of 5.09 cm2 V−1 s−1, which is much superior to the C60 polycrystalline film-based devices. This strategy opens new opportunities for the scalable fabrication of high-performance integrated devices based on organic crystals.

STUDY ON GROWTH OF C 60 MOLECULES ON GaAs(001) SUBSTRATE BY SCANNING TUNNELING MICROSCOPY

EPITAXIAL GROWTH OF (0001)ORIENTED 6H-Sic FILMS ON Si(111) SUBSTRATE BY ORGANIC SOL-GEL FILM ANNEALING

Epitaxial thin films of C70: Growth and structure characterization

Growth And Structure Of C(60) Thin-Films On Nacl, Glass And Mica Substrates

MOLECULAR BEAM EPITAXIAL GROWTH AND STRUCTURE OF COBALT FILM ON GaAs(001) SURFACE

Strain-Relief Patterns and Kagome Lattice in Self-Assembled C60 Thin Films Grown on Cd(0001)

Study of Si and Ge growth on Si(100) surface

Two-stage growth for highly ordered epitaxial C$_{60}$ films on Au(111)

Tuning of C-60 Energy Levels Using Orientation-Controlled Phthalocyanine Films

Growth Of C-60 Single Crystal Films On Metal Substrates

Step Bunching Formation On Gaas(001) Introduced By Surface Reconstruction

Film Growth And Surface Reactions Of C-60 On Si(100)H(2x1)

Structural Study On C-60 Material

Scanning Tunneling Microscopy Of Endohedral Metallofullerene Tb@C-82 On C-60 Film And Si(100) 2 X 1 Surface

Synchrotron-radiation Study of the Electronic Structure of Fcc Mn Thin Films Grown on a GaAs(001) Surface.

Synthesis and Characterization of Ag–C60 Nanostructure Film

TEM Study of the Structure of GaAs on Vicinal Si (001) Surface Grown by MBE

Influence of Surface Structures on Quality of CdTe(100) Thin Films Grown on GaAs(100) Substrates

Wafer‐Scale Growth of Aligned C 60 Single Crystals via Solution‐Phase Epitaxy for High‐Performance Transistors

Sb Mediated C-60 Film Growth on Mica, Si, and Glass Substrates

Sb induced compact-fractal-compact growth transition of C60 films