Film Growth And Surface Reactions Of C-60 On Si(100)H(2x1)

J. Schmidt,M. Hunt,P. Miao,R. Palmer
DOI: https://doi.org/10.1103/PhysRevB.56.9918
IF: 3.7
1997-01-01
Physical Review B
Abstract:High-resolution electron-energy-loss spectroscopy (HREELS) has been used to characterize C-60 films up to 4 monolayers thick grown at room temperature on hydrogen-terminated Si(100). Our results show that compared with C-60 films on clean Si(100) surfaces a considerably higher degree of order in the as-deposited films is achieved. At low coverages the observed C-60 vibrational modes and the Si-H vibrations of the substrate are essentially unshifted, indicating a van der Waals-type interaction between C-60 and Si(100)H(2x1). After annealing at 450 K the film order is substantially increased. Annealing at 600 K results in desorption of the C-60 multilayers and a hydrogen-transfer reaction from the surface to the adsorbed monolayer molecules. When annealing the sample at 800 K, the remaining surface terminating hydrogen desorbs and evidence for a change in the C-60 bonding configuration is found. Finally, flashing the sample at 1300 K leads to the formation of silicon carbide.
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